1. H- density profile and response to applied bias and extraction voltages in H- source.
- Author
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Nakano, H., Tsumori, K., Kisaki, M., Ikeda, K., Nagaoka, K., Osakabe, M., Kaneko, O., Asano, E., Kondo, T., Sato, M., Shibuya, M., Komada, S., Sekiguchi, H., and Takeiri, Y.
- Subjects
ELECTRIC potential ,ION sources ,HYDROGEN ions ,PLASMA gases ,ELECTRODES ,CESIUM ,IONIZATION chambers - Abstract
Characteristics of negative-hydrogen ion (H-) density in the vicinity of plasma grid (PG) which is a boundary electrode between plasma and beam were experimentally investigated in cesium-seeded H- source. The H- density was measured with Cavity Ring Down method (CRD). Our CRD system has been upgraded from fixed line measurement to movable one which provides a profile measurement of the H- density. The H- density above the PG aperture is lower than that above the PG metal surface, and this density structure become to disappear in further region from the PG surface. The H- density decreases with positive bias voltage where an arc discharge chamber is higher potential than the PG. On the other hand, the H- density does not largely change with negative bias voltage. Reduction of the H- density was observed when a beam extraction voltage is applied. The reduction occurs in the case of lower bias voltage close to plasma potential. The extraction voltage influences H- density to a greater degree than bias voltage in low bias voltage region. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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