3,325 results on '"GALLIUM compounds"'
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2. Etch masks of semimetallic amorphous carbon thin films produced by electron-beam sublimation of graphitic carbon
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3. Ballistic electron emission microscopy, current transport, and p-type. delta. doping control on n-isotype InAs-GaAs heterojunctions
4. Optical spectroscopy of (001) GaAs and AlAs under molecular-beam epitaxy growth conditions
5. Relation between reflection high-energy electron diffraction specular beam intensity and the surface atomic structure/surface morphology of GaAs(111)B
6. Sulfur bonding to GaAs
7. A new probe of metallization microstructure on semiconductor surfaces
8. Electronic structure of ideal and nonideal metal/GaAs contacts
9. Scanning cathodoluminescence microscopy: A unique approach to atomic-scale characterization of heterointerfaces and imaging of semiconductor inhomogeneities
10. Band structure effects in interband tunnel devices
11. Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs
12. Scanning tunneling microscopy of molecular-beam epitaxially grown GaAs (001) surfaces
13. Epitaxial growth and interface parameters of Si layers on GaAs(001) and AlAs(001) substrates
14. Reconstruction at the Ga sub 2 Se sub 3 /GaAs epitaxial interface
15. Low-energy cathodoluminescence spectroscopy studies of III-V superlattice interdiffusion: Optical emission properties of diffusion associated defects
16. Passivation of GaAs(001) surfaces by incorporation of group VI atoms: A structural investigation
17. Surface-photovoltage effects on adsorbate-covered semiconductor surfaces at low temperatures
18. Surface photovoltage at Cs/GaAs(110): Photoemission experiments and theoretical modeling
19. Ballistic electron emission spectroscopy of metals on GaP(110)
20. Schottky barrier heights for GaAs diodes fabricated at low temperatures
21. The metal adatom on GaAs(110): A surface negative U center
22. Surface reconstructions and surface energies of monolayer-coverage cation-terminated Ga sub 0. 5 In sub 0. 5 P(001) surfaces
23. The molecular beam epitaxy growth of InGaAs on GaAs(100) studied by in situ scanning tunneling microscopy and reflection high-energy electron diffraction
24. In situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001) n- and p-type GaAs surfaces
25. An x-ray photoelectron spectroscopy study of bonding at II-VI/III-V heterovalent interfaces
26. Arsenic coverage dependence of the angular distribution of secondary ions desorbed from the GaAs(001)(2 times 4) surface
27. Morphology, chemistry, and band bending at Ag- and In-(100)GaSb interfaces
28. Nonuniform strain profiles in cubic CdS/GaAs films measured by reflection high energy electron diffraction and Raman spectroscopy
29. Increased range of Fermi-level stabilization energy at metal/melt-grown GaAs(100) interfaces
30. Surface Fermi level engineering: Or there's more to Schottky barriers than just making diodes and field effect transistor gates
31. Intrinsic recombination and interface characterization in surface-free GaAs structures
32. Bulk and interfacial properties of the compositionally graded In sub x Al sub 1-x As (x le 0. 52) quasi-insulator and its applications
33. Reactivity, growth mode, and kinetics of the Fermi level pinning at the Ni/GaAs(110) interface
34. Growth of As overlayers on vicinal Si(100) surfaces
35. Incorporation/desorption rate variation at heterointerfaces in III-V molecular-beam epitaxy
36. The effect of submonolayer Sn. delta. -doping layers on the growth of InGaAs and GaAs
37. Phase stability versus the lattice mismatch of (100)Co sub 1-x Ga sub x thin films on (100)GaAs
38. Interface formation and film morphology for growth of Fe and Co on ZnSe(001)
39. Surface photovoltage and band bending at metal/GaAs interfaces: A contact potential difference and photoemission spectroscopy study
40. Band bending at low-temperature metal/III-V semiconductor interfaces: The overshoot phenomenon
41. Laser induced deposition of tungsten on GaAs from WF[sub 6]
42. Critical passivation ledge thickness in AlGaAs/GaAs heterojunction bipolar transistors
43. Adsorption of nitric oxide, nitrous oxide, and oxygen on ion-bombarded gallium arsenide(100)
44. Observation of a 1. 2 eV defect photoluminescence peak in heavily planar-doped n-type GaAs grown by molecular-beam epitaxy
45. Structural characterization of encapsulated Au/Zn/Au ohmic contacts to p-type GaAs
46. New technique for dry etch damage assessment of semiconductors
47. Influence of silicon nitride cap on the thermal stability of strained Al[sub 0. 32]Ga[sub 0. 68]As/In[sub 0. 1]Ga[sub 0. 9]As high mobility structures grown by metalorganic chemical vapor deposition
48. Elimination of planar faults in lattice-matched heteroepitaxial films using ion-assisted molecular-beam epitaxy
49. Trilayer lift-off metallization process using low temperature deposited SiN[sub x]
50. Electrical characteristics of Ar-ion sputter induced defects in epitaxially grown n-GaAs
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