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Different SrTiO3 thin films are investigated to unravel the nature of ultra‐low conductivities recently found in SrTiO3 films prepared by pulsed laser deposition. Impedance spectroscopy reveals electronically pseudo‐intrinsic conductivities for a broad range of different dopants (Fe, Al, Ni) and partly high dopant concentrations up to several percent. Using inductively‐coupled plasma optical emission spectroscopy and reciprocal space mapping, a severe Sr deficiency is found and positron annihilation lifetime spectroscopy revealed Sr vacancies as predominant point defects. From synchrotron‐based X‐ray standing wave and X‐ray absorption spectroscopy measurements, a change in site occupation is deduced for Fe‐doped SrTiO3 films, accompanied by a change in the dopant type. Based on these experiments, a model is deduced, which explains the almost ubiquitous pseudo‐intrinsic conductivity of these films. Sr deficiency is suggested as key driver by introducing Sr vacancies and causing site changes (FeSr and TiSr) to accommodate nonstoichiometry. Sr vacancies act as mid‐gap acceptor states, pinning the Fermi level, provided that additional donor states (most probably TiSr••\[{\rm{Ti}}_{{\rm{Sr}}}^{ \bullet \bullet }\]) are present. Defect chemical modeling revealed that such a Fermi level pinning also causes a self‐limitation of the Ti site change and leads to a very robust pseudo‐intrinsic situation, irrespective of Sr/Ti ratios and doping. [ABSTRACT FROM AUTHOR]

The defect chemistry and electronic trapping energies in undoped single crystalline SrTiO 3 were examined by electrochemical impedance spectroscopy at low (25–160 °C) and intermediate (500–700 °C) temperatures. Electronic and ionic conductivity as well as chemical capacitance values were obtained with a transmission line equivalent circuit. Impedance spectroscopy at low temperatures was used to quantify trapping energies of main ionic defects. Particularly the chemical capacitance is shown to be a highly valuable, though hardly used tool for establishing a defect model based solely on electrochemical measurements. It is very sensitive for minority charge carriers and can thus unveil otherwise hardly accessible defect concentrations. The chemical capacitance analysis yields a valence dependent acceptor concentration in the ppm range for the investigated samples. Complementary positron annihilation lifetime spectroscopy (PALS) suggests existence of Ti vacancies and both methods (chemical capacitance and PALS) agree in their quantification of the corresponding vacancy concentration (6 ppm). Beyond successfully predicting acceptor defect concentrations in undoped SrTiO 3 , the method is sensitive for electronically relevant defects in sub-ppm concentrations. [ABSTRACT FROM AUTHOR]