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Poling process is one of the widely used strategies to enhance the film properties during the manufacturing processes of ceramic film. A lab-made PbZrxTi1-xO3 (PZT) film by spin-coating on Ti substrate is presented. After heating treatments, the fabricated film was passed corona poling under ultraviolent (UV) light of various power. The characteristics of the PZT film have been evaluated by several instruments, such as X-ray diffractometer (XRD), scanning electron microscopy (SEM) and impedance analyzer. The results indicated that UV light would affect the orientation of crystallization, microstructure and grain size of PZT film surface during poling process under room temperature. [ABSTRACT FROM AUTHOR]

The paper investigates the voltage effect of corona poling on the characteristics of PbZr x Ti 1−x O 3 (PZT) thin film. Purchased PZT powder and lab-made PZT solution were mixed together as sol-gel that was spin-coated on titanium (Ti) substrate. X-ray diffractometer (XRD), scanning electron microscopy (SEM), impedance analyzer were utilized to measure the orientation and dielectric characteristics of films for comparison. The experimental results indicated that the poling voltage would not affect the orientation of crystallization, microstructure and grain size of PZT film surface. However, the higher applied poling voltage would result in better charge storage capacity and energy transfer efficiency of the film. [ABSTRACT FROM AUTHOR]

The paper presents the effect of substrates on the characteristics of PbZrxTi1−xO3(PZT) thin film fabricated by sol-gel spin coating technology. The PZT sol-gel is prepared by mixing PZT powder and PZT solution, and fabricated on various substrates, including copper (Cu), alumina (Al2O3), stainless steel (SS) and titanium (Ti). The dielectric characteristics and orientation of films had been measured by SEM, LCR meter, XRD for comparison. The experimental results indicate that the substrates having the similar characteristics with PZT film would result in better crystallization, charge storage capacity and energy transfer efficiency of film. [ABSTRACT FROM AUTHOR]