Search

Epitaxial growth of the three-dimensional topological semimetal Cd3As2 on semiconductor substrates enables its use and integration in device applications. Epitaxy also provides an avenue for varying and controlling point defects through modification of the chemical potential during growth. In turn, knowledge of the point defects that are generated in Cd3As2 epilayers will aid the interpretation of electron transport behavior and guide growth efforts to produce material with low defect densities. Point defects in Cd3As2 epilayers grown by molecular beam epitaxy with varying As/Cd flux ratios are probed by positron annihilation spectroscopy. We find that lower As/Cd flux ratios produce higher concentrations of point defects. Remarkably, the measurements indicate that the average defect size is larger than a monovacancy. The data presented here contribute to an evolving picture of vacancy point defects in Cd3As2 and can be used to direct future investigation of the defect-transport relationships in this emerging electronic material.

We demonstrate the manipulation of magnetic phases in FeRh thin films through atomic displacements and the distribution of structural defects. Atomic scale disorder can be controlled via irradiation with light noble gas ions, producing depth-varying nanoscale phase configurations of distinct antiferromagnetic, ferromagnetic, and paramagnetic regions. Here, we perform a spatial characterization of the magnetic phases and the local magnetic environment around the Fe atoms, as well as the variation of the open-volumes around atomic sites. Thus, a direct correspondence between the existence of the three magnetic phases and lattice defects is revealed. By careful selection of the irradiating fluence, we show that it is possible to produce simple and thermally stable magnetic configurations, such as uniform magnetization or a bilayer phase structure. Furthermore, the thin film surface and interfaces are observed as the nucleation sites for the transitions between the phases. These results demonstrate a sensitive nanoscale manipulation of magnetic properties, shedding light on magnetic ordering in alloy lattices and broadening the scope for applications.

The X /Co 3 nm/ Y (where X , Y = Au, Pt) trilayers with as deposited in-plane magnetization alignment were irradiated with 30 keV Ga ^+ ions in the wide range of ion fluence. The samples were investigated by means of complementary techniques: magneto-optical magnetometry and spectroscopy (in the photon energy range from 1.2 eV to 4.5 eV), magnetic force microscopy, positron annihilation spectroscopy, x-ray diffraction and reflectivity. Difference in miscibility of interface atoms is clearly manifested in various intermixing extent at Co/Pt and Co/Au interfaces and consequently in magnetic properties of the irradiated trilayers. Low irradiation fluence (∼10 ^14 ions cm ^−2 ) leads to ∼1 nm interfaces broadening without visible surface etching for all samples, which is related with a distinct drop of magnetic anisotropy. However, the high irradiation fluence (∼5 × 10 ^15 ions cm ^−2 ) results in enhanced interface broadening and significant surface etching (∼5 nm) partially removing also Co atoms. Tensile strains (up to 0.5%) were developed in the cover layers. The tensile strain, layers intermixing and the creation of Co–Pt(Au) alloys with different composition formed by irradiation are correlated with the increase of magnetic anisotropy. Moreover it was observed that substitution of Au instead of Pt (as a cap or buffer layer) results in substantial increase of perpendicular magnetic anisotropy. Maximal increase of magnetooptical parameters was observed for Pt/Co/Pt layer. Irradiation induced changes of concentration profiles are revealed using magnetooptical spectra, x-ray reflectivity spectra and simulations with use of binary collision approximation.