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Start Over Descriptor "vertical β-ga2o3 nanowire arrays" Topic qc1-999
2 results on '"vertical β-ga2o3 nanowire arrays"'

1. Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga2O3 nanowire arrays

Author

Zhang Liying, Xiu Xiangqian, Li Yuewen, Zhu Yuxia, Hua Xuemei, Xie Zili, Tao Tao, Liu Bin, Chen Peng, Zhang Rong, and Zheng Youdou

Subjects
inductively coupled plasma etching, solar-blind photodetector, vertical β-ga2o3 nanowire arrays, Physics, QC1-999
Abstract

Vertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (Ilight/Idark) of ∼104 and a ultraviolet/visible rejection ratio (R260 nm/R400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.

Published
2020
Full Text
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2. Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga2O3 nanowire arrays

Author

Hua Xuemei, Tao Tao, Xiangqian Xiu, Li Yuewen, Zili Xie, Rong Zhang, Youdou Zheng, Bin Liu, Liying Zhang, Peng Chen, and Yuxia Zhu

Subjects
010302 applied physics, Materials science, business.industry, Physics, QC1-999, Nanowire, Photodetector, 02 engineering and technology, 021001 nanoscience & nanotechnology, medicine.disease_cause, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Nanomaterials, solar-blind photodetector, 0103 physical sciences, vertical β-ga2o3 nanowire arrays, medicine, inductively coupled plasma etching, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Ultraviolet, Biotechnology
Abstract

Vertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (I light/I dark) of ∼104 and a ultraviolet/visible rejection ratio (R 260 nm/R 400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.

Published
2020
Full Text
View/download PDF

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