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Electrostatic Discharge (ESD) effects have been identified as one of the most dangerous causes of giant magnetoresistive (GMR) recording head damage. These phenomena have been studied at all levels of hard-disk drive manufacturing 1. The head gimbal assembly (HGA) is mainly studied because of its exposure to the environment. The standard models are typically based on the human body model (HBM), the machine model (MM) and the charged device model (CDM) where research and practical tests are incompatible. In production, one or more ESD models are normally effective while the other is undergone under a separate model. In addition, tests in the time domain are more accurate than those in the frequency domain. However, picosecond measurements are taken with difficulty where the frequency domain measurement provides non-real time results. Therefore, this is the first report of serial ESD detection using the new technique of wavelet transform. It has been found that the glitch occurs when the ESD level of HBM – MM and HBM – CDM serial ESD on GMR heads are in the ranges of 1.2-2.6 V and 12-15 V respectively. [ABSTRACT FROM AUTHOR]

Electrostatic discharge (ESD) effects on GMR recording heads have been reported as the major cause of head failure. Since the information density in hard-disk drives has dramatically increased, the GMR head will be no longer in use. The tunneling magnetoresistive (TMR) read heads are initially introduced for a 100 Gbit/in2 density or more. Though the failure mechanism of ESD in GMR recording heads has not been explicitly understood in detail, a study to protect from this effect has to be done. As the TMR head has been commercially started, the ESD effect must be considered. This is the first time that the TMR equivalent circuit has been reported in order to evaluate the ESD effect. A standard human body model (HBM) is discharged across R+ and R- where the capacitances of flex on suspension (FOS) are varied. It is intriguingly found that the electrical characteristics of the TMR head during the discharge period depend on the discharge position. This may be explained in terms of the asymmetry impedance of TMR by using adapted Thevenin's theory. The effect of FOS components on TMR recording heads is also discussed. [ABSTRACT FROM AUTHOR]

This works reports, for the first time, the thorough study and optimisation of Phase Change Memory (PCM) structure with thin metal inserted chalcogenide via electrical resistivity (ρ) using finite element modeling. PCM is one of the best candidates for next generation non-volatile memory. It has received much attention recently due to its fast write speed, non-destructive readout, superb scalability, and great compatibility with current silicon-based mass fabrication. The setback of PCM is a high reset current typically higher than 1mA based on 180nm lithography. To reduce the reset current and to solve the over-programming failure, PCM with thin metal inserted chalcogenide (bottom chalcogenide/metal inserted/top chalcogenide) structure has been proposed. Nevertheless, reports on optimisation of the electrical resistivity using the finite element method for this new PCM structure have never been published. This work aims to minimize the reset current of this PCM structure by optimizing the level of the electrical resistivity of the PCM profile using the finite element approach. This work clearly shows that PCM characteristics are strongly affected by the electrical resistivity. The 2-D simulation results reveal clearly that the best thermal transfer of and self-joule-heating at the bottom chalcogenide layer can be achieved under conditions; ρ_bottom chalcogenide > ρ_metal inserted > ρ_top chalcogenide More specifically, the optimized electrical resistivity of PCMTMI is attained with ρ_top chalcogenide: ρ_metal inserted: ρ_bottom chalcogenide ratio of 1:6:16 when ρ_top chalcogenide is 10-3 Ωm. In conclusion, high energy efficiency can be obtained with the reset current as low as 0.3mA and with high speed operation of less than 30ns. [ABSTRACT FROM AUTHOR]