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Abstract We present a systemic theoretical study of the electronic properties of the quantum dots inserted in quantum dot infrared photodetectors (QDIPs). The strain distribution of three different shaped quantum dots (QDs) with a same ratio of the base to the vertical aspect is calculated by using the short-range valence-force-field (VFF) approach. The calculated results show that the hydrostatic strain ɛHvaries little with change of the shape, while the biaxial strain ɛBchanges a lot for different shapes of QDs. The recursion method is used to calculate the energy levels of the bound states in QDs. Compared with the strain, the shape plays a key role in the difference of electronic bound energy levels. The numerical results show that the deference of bound energy levels of lenslike InAs QD matches well with the experimental results. Moreover, the pyramid-shaped QD has the greatest difference from the measured experimental data.

We report a 2D simulation of electrical and optical characteristics of green color InGaN/GaN multiple quantum well light-emitting diodes by APSYS software with a dot-in-well model. The In-rich quantum dot-like structure in InGaN/GaN multiple quantum wells has been considered in the LED experimental data analysis. Simulation results based on the quantum dot model are in better agreement with the experimental data than those based on the purely quantum well model, indicating that the quantum dot spontaneous emission and the non-equilibrium quantum transport play important roles in the InGaN/GaN multiple quantum well light-emitting diodes. [ABSTRACT FROM AUTHOR]

Nonlocal investigations are presented for exciton-photon coupling in three-dimensional nano-spherical-particle photonic crystals in compound lattices for a tailored dielectric environment to optimize the optical properties of nano particles. The photonic band structure can be modified by tuning the nano particle size and the distance between two interlacing identical face-centered sub-lattices making up the photonic crystal lattice. A complete photonic band gap with a gap-midgap ratio as large as 40.82% has been found in the wurzite structure under the current investigation. [ABSTRACT FROM AUTHOR]

A field effect enhanced quantum dot resonant tunneling diode is proposed and demonstrated to improve the detection dynamic range for low light imaging application. Using the cross-wire device geometry, a lateral two dimensional electron gas (2DEG) current is formed in the quantum well channel together with the normal resonant tunneling current for quantum dot modulation. A peak photoresponsivity of the order of 1010 A/W and a light detection saturation level up to 105 photons per second at 77 K are achieved when the 2DEG current makes the main photocurrent contribution. [ABSTRACT FROM AUTHOR]

We report pronounced enhancement of room-temperature photoluminescence up to 80-fold induced by proton implantation and the rapid thermal annealing process in a multilayer InAs/GaAs quantum-dot structure. This effect is studied by a combination of material methods and resulted from both proton passivation and carrier capture enhancement effects. The maximum photoluminescence peak shift is about 23 meV, resulting from the intermixing of quantum dots. Linear dependence behavior as observed for both the nonradiative recombination time and carrier relaxation time on the ion-implantation dose. Maximum enhancement of the photoluminescence is observed for a proton implantation dose of 1.0×10[sup 14] cm[sup -2] followed by rapid thermal annealing at 700 °C. These effects will be useful for quantum dot optoelectronic devices. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We have used proton-implantation-induced intermixing and a passivation effect to enhance the light-emission efficiency in multilayer InAs/GaAs quantum dots (QDs). Photoluminescence (PL) spectroscopy is used to study both the intermixing and passivation effects. Besides the blueshift of the luminescence peak due to the intermixing-induced energy band variation, a six times higher PL intensity increase is observed, relative to that of as-grown QDs, with a proton implantation dose of 5 × 10[SUP13] cm[SUP-2] followed by rapid thermal annealing at 700°C. These effects are beneficial to both the quantum efficiency and the wavelength tuning of optoelectronic devices. [ABSTRACT FROM AUTHOR]