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In this paper we demonstrate the possibility of achieving selective epitaxy and epitaxial lateral overgrowth (ELO) using nanometric openings patterned with a focused ion beam (FIB). The test structure we used in this work consists of an AlN buffer layer on 6H–SiC with very high crystal quality close to pseudomorphism. This substrate is first covered with a thin (∼2 nm) silicon nitride mask deposited by CVD. Then a high resolution FIB was used to create regular openings with a range of sizes (lowest 100 nm) and organisation. Finally, GaN was grown on the structure by metal-organic vapour phase epitaxy (MOVPE). The relatively low ion dose (2.7 × 1016 ions/cm2) required to remove the surface layer allows reasonable patterning speeds (0.45 ms/pt) and minimises FIB-induced defect extension in the vicinity of the patterned GaN structures. [Copyright &y& Elsevier]

Abstract: Nanoengraving of membranes as a template for nanopores fabrication is an application field of growing interest. Similarly to the formation of ion tracks in membranes created when high-energetic ions pass trough thin foils, it is possible with a FIB system to fabricate, design and organise nanodevices within thin membranes. In this work, we detail the advanced methodology we have carefully optimised for such deep sub-10nm nanodevices fabrication using our high-performance FIB instrument. [Copyright &y& Elsevier]

Abstract: The discrete nature of the electronic states of InAs quantum dots (QDs) is very promising for the realisation of original and high performance optoelectronic devices like QD lasers. One application of these QDs is the placement of a single QD within a vertical cavity emitting laser. The creation of these devices requires a well defined position of the QDs which are usually grown as Stranski–Krastanov self-assembled structures. However, structures grown using this technique are randomly distributed. In this work, we report our efforts to address this problem using FIB technology to determine the exact location prior epitaxial growth. [Copyright &y& Elsevier]