1. Metal–Organic Vapor‐Phase Epitaxy of Semipolar InGaN Quantum Dots Based on GaN V‐Shaped Pits.
- Author
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Wang, Xun, Han, Xu, Yu, Jiadong, Hao, Zhibiao, Luo, Yi, Sun, Changzheng, Han, Yanjun, Xiong, Bing, Wang, Jian, Li, Hongtao, and Wang, Lai
- Subjects
INDIUM gallium nitride ,GALLIUM nitride ,POLARIZATION (Electricity) ,EPITAXY ,ELECTRIC fields ,QUANTUM dots - Abstract
Semipolar {101¯1} InGaN quantum dots (QDs) formed on GaN V‐shaped pits by metal–organic vapor‐phase epitaxy (MOVPE) with a growth interruption method are reported. The 3D GaN V‐pit structures are directly grown on a patterned sapphire substrate (PSS). By adjusting the pattern arrangement direction on the substrate, it is observed in the scanning electron microscopy (SEM) image that elliptical QDs are formed on the {101¯1} semipolar sidewalls of the V‐pits with a density of about 5 × 1010 cm−2. The emission wavelength of semipolar InGaN QDs is confirmed by cathodoluminescence (CL). The gradient distribution of In composition and QD size are observed along the sidewall of the V‐pits. On this basis, a three‐period semipolar InGaN QD sample is prepared. For the temperature‐dependent photoluminescence (TDPL) test, the prominent peak of the sample shows a blueshift with the increase in temperature and reaches the green band (≈523 nm) at room temperature (RT). According to time‐resolved photoluminescence (TRPL) decay curves, a carrier lifetime of 329.3 ps fit by the stretched exponential model is obtained at RT. Compared with c‐plane QDs with the same growth method, the semipolar QDs have a shorter radiative recombination lifetime due to suppressed polarization electric field. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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