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Stable and efficient red (R), green (G), and blue (B) light sources based on solution-processed quantum dots (QDs) play important roles in next-generation displays and solid-state lighting technologies. The brightness and efficiency of blue QDs-based light-emitting diodes (LEDs) remain inferior to their red and green counterparts, due to the inherently unfavorable energy levels of different colors of light. To solve these problems, a device structure should be designed to balance the injection holes and electrons into the emissive QD layer. Herein, through a simple autoxidation strategy, pure blue QD-LEDs which are highly bright and efficient are demonstrated, with a structure of ITO/PEDOT:PSS/Poly-TPD/QDs/Al:Al2O3. The autoxidized Al:Al2O3 cathode can effectively balance the injected charges and enhance radiative recombination without introducing an additional electron transport layer (ETL). As a result, high color-saturated blue QD-LEDs are achieved with a maximum luminance over 13,000 cd m -2 , and a maximum current efficiency of 1.15 cd A -1 . The easily controlled autoxidation procedure paves the way for achieving high-performance blue QD-LEDs.

Quantum dot light-emitting diodes (QD-LEDs) are characterized by pure and saturated emission colors with narrow bandwidth. Optimization of the device interface is an effective way to achieve stable and high-performance QD-LEDs. Here we utilized solution-processed molybdenum oxide (MoOx) as the anode buffer layer on ITO to build efficient QD-LEDs. Using MoOx as the anode buffer layer provides the QD-LED with good Ohmic contact and a small charge transfer resistance. The device luminance is nearly independent of the thickness of the MoOx anode buffer layer. The QD-LEDs with a MoOx anode buffer layer exhibit a maximum luminance and luminous efficiency of 5230 cd m(-2) and 0.67 cd A(-1) for the yellow emission at 580 nm, and 7842 cd m(-2) and 1.49 cd A(-1) for the red emission at 610 nm, respectively.

A better charge balance is realized for blue quantum dot light‐emitting diodes (QLEDs) through doping the charge transport layer (CTL) to improve hole injection and suppress redundant electrons. High performance blue QLEDs were achieved by fine‐tuning the charge balance within the emitting layer. [ABSTRACT FROM AUTHOR]

The balance of hole–electron injection is always a vital factor for the luminance, efficiency and working lifetime of quantum‐dot light‐emitting diodes (QLEDs), especially blue QLEDs. However, currently most approaches proposed to solve this issue involve tedious optimization of device architecture or material composition. Here, high‐performance blue QLEDs are reported based on CdZnS/ZnS quantum‐dot (QDs) by utilizing ZnO nanoparticles (NPs) and Al:Al2O3 as electron‐transporting layer (ETL) and cathode materials, respectively. The effect of post‐annealing temperature on the trap state density in ZnO NPs and the related mechanisms are investigated through optical and photoelectron spectroscopies. The method of controlling ZnO NPs annealing temperature leads to controllable electron‐mobility of ETL, which ultimately optimizes the balance of charge injection. Together with partially oxidized Al cathode (Al:Al2O3), high‐performance blue QLEDs are fabricated with luminance and external quantum efficiency (EQE) up to 27 753 cd m−2 and 8.92%. As far as is known, the peak luminance achieved is the record of deep blue QLEDs. This simple method for regulating charge injection balance via annealing temperature requires no modification of device architecture, making it applicable for a variety of QLEDs structures. High‐performance blue QLEDs are fabricated based on a ZnO nanoparticle (NP) electron‐transporting layer and a Al:Al2O3 cathode. The electron mobility in ZnO NP films can be regulated for better electron–hole balance by controlling the annealing temperature, thereby ensuring excellent luminance and recombination efficiency. This simple way to adjust charge injection balance requires no additional modification of the device architecture. [ABSTRACT FROM AUTHOR]

Colloidal quantum dots light‐emitting diodes (QD‐LEDs) have been investigated for several decades. Compared with their green and red counterparts, the hole injection is more difficult for blue QDs due to their large optical band gap and relatively low highest occupied molecular orbital level. High‐performance blue QD‐LEDs are demonstrated by inserting a thin deoxyribonucleic acid (DNA) buffer layer between hole transport layer and ZnCdS/ZnS core/shell QDs layer. This DNA buffer layer can effectively enhance the hole injection efficiency, meanwhile its high lowest unoccupied molecular orbital level can help the injected electrons to be confined in the emitting layer, thus ensuring the charge balance in the QDs layer and an excellent recombination efficiency. After utilizing DNA as buffer layer, the maximum luminance is significantly increased from 10 218 to 16 655 cd m−2 and the external quantum efficiency is increased from 4.39% to 5.65%. These devices provide a saturated blue emission with emission peak located at 462 nm and full width at half maximum of 21 nm. This saturated blue emission makes it suitable for commercial applications. The results indicate that DNA is a promising material for regulating charge balance in the emitting layer for manufacturing high performance QD‐LEDs. Highly luminescent blue quantum‐dot (QD) light‐emitting diodes are successfully fabricated by introducing a thin deoxyribonucleic acid (DNA) interlayer between the hole transport layer and QDs emitting layer. The DNA buffer layer can effectively enhance the hole injection efficiency and confine the electrons in the emitting layer, thus ensuring the charge balance in the QDs layer and an excellent recombination efficiency. [ABSTRACT FROM AUTHOR]