Search

Bulk gallium nitride (GaN) has shown great success in light‐emitting diodes (LEDs), but the use of its counterpart GaN quantum dots (QDs) to obtain electroluminescence has not yet been reported. In this work, the first GaN‐based QLED is demonstrated using Zn‐doped GaN (GaN: Zn) QDs, which is achieved through the combination of trap passivation, energy level adjustment, and morphology engineering. Pure GaN QDs and GaN: Zn QDs are synthesized, and it is found that Zn doping shifts the GaN QD emission from 321 to 377 nm and tunes the highest occupied molecular orbital energy level from 8.6 eV (of original GaN QDs) to 6.9 eV. Multiple washing posttreatment is further developed to improve QD film morphology and size distribution. The optimized GaN: Zn QDs are employed to fabricate solution‐processed LEDs, and the first GaN‐based QLEDs are reported with a maximum quantum efficiency of 0.004%. [ABSTRACT FROM AUTHOR]

Lanthanide ions (Yb3+ or Er3+) alloying of CsPb(Cl1‐xBrx)3 quantum dots (QDs) to emit approaching 1000 nm show promise in near‐infrared light‐emitting diodes (NIR‐LEDs). High Yb3+ alloying ratio increases the electroluminance efficiency of emission at 990 nm and enables high external quantum efficiency (EQE) of NIR‐LEDs, however, the high alloying ratio also results in inferior material stability and PLQY drop because of Yb3+‐induced nanocrystal precipitation. This study finds that the heavy alloying of Yb3+ ions causes lattice distortion and coherent energy reduction of Yb3+: CsPb(Cl1‐xBrx)3 QDs, induced by two Yb3+ ions replacing three Pb2+, which leads to the collapse of the octahedral structure in ambient conditions. It posits that spontaneous monovalent ion (Na+) alloying can address the trade‐off between material stability and emission intensity. The Na+ occupies the vacancy of Pb2+ ions, relaxing the distortion in the lattice and improving the phase stability of octahedral structure, and this optimized structure in turn allows a higher Yb3+ alloying ratio. Stability measurements show that the Na+/Yb3+ co‐alloyed films show ten‐fold higher material stability and 2.0‐fold emission efficiency related to controls. It reports that as a result Na+/Yb3+ co‐alloyed NIR‐LEDs have an EQE of 6.4% at 990 nm, which is among the highest perovskite NIR‐LEDs beyond 950 nm. [ABSTRACT FROM AUTHOR]

Quantum dot light-emitting diodes (QLEDs) have been identified as a next-generation display technology owing to their low-cost manufacturing, wide color gamut, and electrically driven self-emission properties. However, the efficiency and stability of blue QLEDs still pose a significant challenge, limiting their production and potential application. This review aims to analyse the factors leading to the failure of blue QLEDs and presents a roadmap to accelerate their development based on the progress made in the synthesis of II-VI (CdSe, ZnSe) quantum dots (QDs), III-V (InP) QDs, carbon dots, and perovskite QDs. The proposed analysis will include discussions on material synthesis, core-shell structures, ligand interactions, and device fabrication, providing a comprehensive overview of these materials and their development. [ABSTRACT FROM AUTHOR]

[Display omitted] In terms of tunable luminescence and high quantum efficiency, colloidal quantum dots (CQDs) are promising semiconductors for constructing near-infrared light-emitting diodes (NIR-LEDs). However, currently available NIR-LEDs are susceptible to variations in the emission layer thickness (EMLT), the highest external quantum efficiency (EQE) decreases to below 50% (relative to peak EQE) when the EMLT varies out of a narrow range of (±30 nm). This is due to the thickness-dependent carrier recombination rate and current density variation, resulting in batch-to-batch EQE fluctuations that limit LED reproducibility. Here we report efficient NIR-LEDs that exhibit EQE variations of less than 15% (relative to the champion EQE) over an EMLT range of 40–220 nm; the highest achievable EQE of ∼11.5% was obtained by encapsulating a 212 nm-thick CQD within a type-I inorganic shell to enhance the radiative recombination in the dots, resulting in a high photoluminescence quantum yield of 80%, and by post-treating the films with a bifunctional linking agent to improve and balance the hole and electron mobilities in the entire film (electron mobility: 8.23 × 10−3 cm2 V−1 s−1; hole mobility: 7.0 × 10−3 cm2 V−1 s−1). This work presents the first NIR-LEDs that exhibit EMLT-invariant EQE over an EMLT range of 40–220 nm, which represents the highest EQE among reported CQD NIR-LEDs with a QD thickness exceeding 100 nm. [ABSTRACT FROM AUTHOR]