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Metal halide perovskite light‐emitting diodes (PeLEDs) are expected to be the next‐generation display technology due to their unique optoelectronic properties. Currently, the external quantum efficiencies of PeLEDs based on solution‐processed fabrication methods already exceed 20%. However, there are still many challenges existing in solution‐based PeLEDs that inhibit their commercialization. Recently, vacuum deposition techniques of perovskites have drawn much attention because of the ability to grow dense and uniform large‐area perovskite films with precisely controlled thickness, which is compatible with state‐of‐the‐art organic LED manufacturing processes. Despite the promising prospects of vacuum‐based PeLEDs, some challenges remain to be addressed to achieve PeLEDs with both high efficiency and high stability that are required for practical applications such as active‐matrix displays. This requires precise control of the film morphology, composition, and interface during the deposition process through fine‐tuning of the substrate temperature, deposition rate, vacuum level, precursor formulation, and post‐treatment conditions. In this review, it focuses on the key requirements for vacuum‐processed PeLEDs, highlights the recent advances in materials and devices of PeLEDs, and emphasize vacuum evaporation methods as well as the corresponding device performance. Possible approaches to improve the efficiency and the long‐term operational stability of vacuum‐processed PeLEDs are discussed. [ABSTRACT FROM AUTHOR]

Performance of blue solution‐processed perovskite light‐emitting diodes (LEDs) is limited by availability of blue perovskite materials. Herein, 4‐(trifluoromethyl)benzoyl ammonium bromide (4‐TMBABr) is used with abundant NH and CO groups to passivate the defects and produce highly stable PEAxPA2‐x(CsPbBr3)n‐1PbBr4 perovskites for blue LED applications. The NH group in the 4‐TMBABr suppresses the Br‐ion mismatch through hydrogen bonds (N‐H···Br) and CO group coordinates the unsaturated lead dangling bonds (CO:Pb). The effective defect passivation by 4‐TMBABr reduces the nonradiative recombination in the perovskite films, hence enhancing its optical performance. In the LED structure, the sodium bis(trifluoromethanesulfonyl)imide (SBTI) modified NiOx films are used to improve the hole transport and to inhibit the fluorescence quenching of the perovskite layer. The dual‐defect manipulation strategy is advantageous for producing efficient and spectrally stable blue perovskite LEDs, and the authors demonstrate an LED with maximum luminance of 1094 cd m−2 and external quantum efficiency of 10.3%. This work can inform and underpin future development of blue perovskite LEDs with highly efficient and stabile performance. [ABSTRACT FROM AUTHOR]

Quasi‐2D Ruddlesden‐Popper perovskites receive tremendous attention for application in light‐emitting diodes (LEDs). However, the role of organic ammonium spacers on perovskite film has not been fully‐understood. Herein, a spacer cation assisted perovskite nucleation and growth strategy, where guanidinium (GA+) spacer is introduced into the perovskite precursor and at the interface between the hole transport layer (HTL) and the perovskite, to achieve dense and uniform perovskite films with enhanced optical and electrical performance is developed. A thin GABr interface pre‐formed on HTL provides more nucleation sites for perovskite crystal; while the added GA+ in perovskite reduces the crystallization rate due to strong hydrogen bonding interacts with intermediates, which promotes the growth of enhanced‐quality quasi‐2D perovskite films. The ionized ammonium group (NH3+) of GA+ also favors formation of polydisperse domain distribution, and amine or imine (NH2 or NH) group interact with perovskite defects through coordination bonding. The spacer cation assisted nucleation and growth strategy is advantageous for producing efficient and high‐luminance perovskite LEDs, with a peak external quantum efficiency of over 20% and a luminance up to 100 000 cd m−2. This work can inform and underpin future development of high‐performance perovskite LEDs with concurrent high efficiency and brightness. [ABSTRACT FROM AUTHOR]

Quasi-two-dimensional (quasi-2D) perov- skites possess the preponderances of large exciton binding energy and quantum confinement effects compared with three-dimensional (3D) perovskites. The unique properties of quasi-2D perovskite have attracted extensive attention in the field of optoelectronic devices, especially in the light emitting diode (LED) direction. However, the adverse effects between the perovskite emission layer and the popularly used hole transport layer (HTL) Poly(3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) have degrade the device performance, such as large energy level barrier and exciton quenching. Here we demonstrated high performance of LED with enhanced brightness and efficiency by modifying the PEDOT:PSS with NdBr3, which not only decreases exciton quenching, but also decreases HOMO level of the PEDOT:PSS, thereby improving the charge balance. The final performance of the perovskite light-emitting diode (PeLED) device was obtained with a maximum luminance of 18684 cd m−2, a maximum current efficiency (CE) of 48.4 cd A−1 and an external quantum efficiency (EQE) of up to 15.5% when using NdBr3 modified PEDOT:PSS. [ABSTRACT FROM AUTHOR]

InP quantum dots (QDs)-based light-emitting diodes (QLEDs) are considered as one of the most promising candidates for environmentally cadmium (Cd)-free electroluminescence devices. However, the performance of InP QLEDs still lags far behind that of Cd-containing QLEDs, which limits their practical applications in next-generation displays and lighting. Here, we report an all-solution processed green InP QLED, which is enabled by an electron transport layer (ETL) of In-doped ZnO (IZO) nanoparticles (NPs). The ETL of IZO NPs can not only suppress the exciton quenching of InP QDs emitting layer due to the reduced defect states, but also improve the charge balance by partially blocking the injection of electrons, and thus the device performance. The optimized InP QLED exhibits a maximum external quantum efficiency (EQE) of 5.42% corresponding to a current efficiency (CE) of 21.22 cd A−1, which is three times higher than that of the control device based on ZnO ETL, respectively. Our work suggests that IZO NPs can function as a good ETL material in QLEDs and other optoelectronic devices. [ABSTRACT FROM AUTHOR]

Quasi-two-dimensional (quasi-2D) Ruddlesden–Popper (RP) perovskites such as BA2Csn–1PbnBr3n+1 (BA = butylammonium, n > 1) are promising emitters, but their electroluminescence performance is limited by a severe non-radiative recombination during the energy transfer process. Here, we make use of methanesulfonate (MeS) that can interact with the spacer BA cations via strong hydrogen bonding interaction to reconstruct the quasi-2D perovskite structure, which increases the energy acceptor-to-donor ratio and enhances the energy transfer in perovskite films, thus improving the light emission efficiency. MeS additives also lower the defect density in RP perovskites, which is due to the elimination of uncoordinated Pb2+ by the electron-rich Lewis base MeS and the weakened adsorbate blocking effect. As a result, green light-emitting diodes fabricated using these quasi-2D RP perovskite films reach current efficiency of 63 cd A−1 and 20.5% external quantum efficiency, which are the best reported performance for devices based on quasi-2D perovskites so far. Owing to large exciton binding energy, quasi-2D perovskite is promising for light-emitting application, yet inhomogeneous phases distribution limits the potential. Here, the authors improve the performance by using MeS additive to regulate the phase distribution and to reduce defect density in the films. [ABSTRACT FROM AUTHOR]

Lead halide perovskite nanocrystals (PeNCs) are promising materials for applications in optoelectronics. However, their environmental instability remains to be addressed to enable their advancement into industry. Here the development of a novel synthesis method is reported for monodispersed PeNCs coated with all inorganic shell of cesium lead bromide (CsPbBr3) grown epitaxially on the surface of formamidinium lead bromide (FAPbBr3) NCs. The formed FAPbBr3/CsPbBr3 NCs have photoluminescence in the visible range 460–560 nm with narrow emission linewidth (20 nm) and high optical quantum yield, photoluminescence quantum yield (PLQY) up to 93%. The core/shell perovskites have enhanced optical stability under ambient conditions (70 d) and under ultraviolet radiation (50 h). The enhanced properties are attributed to overgrowth of FAPbBr3 with all‐inorganic CsPbBr3 shell, which acts as a protective layer and enables effective passivation of the surface defects. The use of these green‐emitting core/shell FAPbBr3/CsPbBr3 NCs is demonstrated in light‐emitting diodes (LEDs) and significant enhancement of their performance is achieved compared to core only FAPbBr3‐LEDs. The maximum current efficiency observed in core/shell NC LED is 19.75 cd A‐1 and the external quantum efficiency of 8.1%, which are approximately four times and approximately eight times higher, respectively, compared to core‐only devices. [ABSTRACT FROM AUTHOR]

Metal halide perovskite nanocrystals (NCs) have shown significant potential in light‐emitting applications due to the unique luminous properties, such as high color purity, tunability, and solution processability. However, the large‐scale production of perovskite NCs with high‐quality for meeting the commercial applications is still a challenge. Herein, a facile room‐temperature synthesis of ten‐gram‐scale FAPbX3 (FA+ = HC(NH2)2+, X = Br, or mixed halide system Cl/Br and Br/I) NCs by a high‐power ultrasonic‐assisted strategy and the electroluminescence for light‐emitting diodes (LEDs) is reported. The uniform high‐power radiation avoids the adverse effects caused by heating and stirring unevenness, and no inert gas is needed in the reaction process. Meanwhile, the room temperature reaction reduces the crystallization rate of the NCs, leading to the successful synthesis of ten‐gram‐scale high‐quality FAPbX3 perovskite NCs. The resulting NCs show size‐focus distribution and high photoluminescence quantum yields of 93%, and the adjustable photoluminescence spectra from 453 to 695 nm by manipulating halide compositions. Attributed to the acquired FAPbBr3 NCs, a high‐efficiency green LED with the maximum current efficiency of 61.3 cd A−1 and external quantum efficiency of 14.1% is also obtained. [ABSTRACT FROM AUTHOR]