1. Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors.
- Author
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Verreck, Devin, Verhulst, Anne S., Van de Put, Maarten, Sorée, Bart, Magnus, Wim, Mocuta, Anda, Collaert, Nadine, Thean, Aaron, and Groeseneken, Guido
- Subjects
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FIELD-effect transistors , *COMPUTATIONAL complexity , *QUANTUM mechanics , *QUANTUM confinement effects , *QUANTUM tunneling - Abstract
Efficient quantum mechanical simulation of tunnel field-effect transistors (TFETs) is indispensable to allow for an optimal configuration identification. We therefore present a full-zone 15-band quantum mechanical solver based on the envelope function formalism and employing a spectral method to reduce computational complexity and handle spurious solutions. We demonstrate the versatility of the solver by simulating a 40 nm wide In0.53Ga0.47As lineTFET and comparing it to p-n-i-n configurations with various pocket and body thicknesses. We find that the lineTFET performance is not degraded compared to semi-classical simulations. Furthermore, we show that a suitably optimized p-n-i-n TFET can obtain similar performance to the lineTFET. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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