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Presents a study which examined the excitonic transitions in high quality metalorganic vapor phase epitaxy grown indium gallium arsenide and indium phosphide quantum wells. Electronic structure of the quantum wells; Deatils on the Fourier transform photoluminescence; Results.

SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (2-2500 × 10-9 Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10 nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure. [ABSTRACT FROM AUTHOR]

SiGe (C)/Si(C) multiquantum wells have been studied as a thermistor material for future bolometers. A thermistor material for uncooled Si-based thermal detectors with thermal coefficient of resistance of 4.5%/K for 100×100 μm2 pixel sizes and low noise constant (K1/f) value of 4.4×10-15 is presented. The outstanding performance of the devices is due to Ni-silicide contacts, smooth interfaces, and high quality multiquantum wells containing high Ge content. [ABSTRACT FROM AUTHOR]