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Your search keyword '"Quinoline -- Electric properties"' showing total 7 results
Start Over Descriptor "Quinoline -- Electric properties" Topic quinoline -- optical properties
7 results on '"Quinoline -- Electric properties"'

1. Impact of trapped charge and interface defects on the degradation of the optical and electrical characteristics in NPD/Al[q.sub.3] OLEDs

Author

Pinato, A., Cester, A., Meneghini, M., Wrachien, N., Tazzoli, A., Xia, S., Adamovich, V., Weaver, M. S., Brown, J. J., Zanoni, E., and Meneghesso, G.

Subjects
Aluminum -- Electric properties, Aluminum -- Optical properties, Biphenyl compounds -- Electric properties, Biphenyl compounds -- Optical properties, Brightness (Photometry) -- Analysis, Light-emitting diodes -- Composition, Light-emitting diodes -- Electric properties, Light-emitting diodes -- Optical properties, Organometallic compounds -- Electric properties, Organometallic compounds -- Optical properties, Quinoline -- Electric properties, Quinoline -- Optical properties, Business, Electronics, Electronics and electrical industries
Published
2010

2. Degradation mechanisms in organic light-emitting devices: Metal migration model versus unstable tris(8-hydroxyquinoline) aluminum cationic model

Author

Luo, Yichun, Aziz, Hany, Popovic, Zoran V, and Gu Xu

Subjects
Light-emitting diodes -- Design and construction, Quinoline -- Electric properties, Quinoline -- Optical properties, Aluminum compounds -- Electric properties, Aluminum compounds -- Optical properties, Organic semiconductors -- Electric properties, Organic semiconductors -- Optical properties, Physics
Abstract

A comparative study of a metal migration model and an unstable tris(8-hydroxyquinoline) aluminum cationic model is presented to understand their roles in the luminescence degradation of organic light emitting devices. The analysis reveals that the operational stability of the devices is highly affected by the alterations in the device layer structures.

Published
2007

3. The properties of tris (8-hydroxyquinoline) aluminum organic light emitting diode with undoped zinc oxide anode layers

Author

Luka, G., Stakhira, P., Cherpak, V., Volynyuk, D., Hotra, Z., Godlewski, M., Guziewicz, E., Witkowski, B., Paszkowicz, W., and Kostruba, A.

Subjects
Aluminum -- Electric properties, Aluminum -- Optical properties, Organic LEDs -- Composition, Quinoline -- Electric properties, Quinoline -- Optical properties, Zinc oxide -- Electric properties, Zinc oxide -- Optical properties, Physics
Abstract

The article explains the various different properties exhibited by the undoped zinc oxide anode film layers that are formed in the tris (8-hydroxyquinoline) aluminum organic light emitting diodes by the atomic layer deposition methodology. The external quantum efficiency of the system is shown to be around 1.5%, which is much better than that exhibited by other conventional devices.

Published
2010

4. Magnetic field dependent triplet-triplet annihilation in [Alq.sub.3]-based organic light emitting diodes at different temperatures

Author

Liu, R., Zhang, Y., Lei, Y.L., Chen, P., and Xiong, Z.H.

Subjects
Aluminum -- Electric properties, Aluminum -- Optical properties, Electroluminescence -- Analysis, Magnetic fields -- Analysis, Quinoline -- Electric properties, Quinoline -- Optical properties, Physics
Abstract

The magnetic field dependent current and electroluminescence (EL) of aluminum tris-(8-hydroxyquinoline) ([Alq.sub.3])-based organic light emitting diodes (OLEDs) are measured at different temperatures. The high field decrease in the EL is weakened and vanishes at higher temperatures, which is due to the field affected triplet-triplet annihilation process.

Published
2009

5. Investigation of Forster-type energy transfer in organic light-emitting devices with 4-(dicyanomethylene)-2-t-butyl-(6-1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran doped cohost emitting layer

Author

Li-Zhen Yu, Xue-Yin Jiang, Zhi-Lin Zhang, Li-Ren Lou, and Ching-Ting Lee

Subjects
Aluminum -- Optical properties, Aluminum -- Electric properties, Energy transformation -- Analysis, Light-emitting diodes -- Design and construction, Light-emitting diodes -- Evaluation, Organometallic compounds -- Optical properties, Organometallic compounds -- Electric properties, Quinoline -- Optical properties, Quinoline -- Electric properties, Physics
Abstract

The fabrication and analysis of organic light-emitting devices (OLEDs) with a cohosted emitter of various component ratios is described. The parameters exploring the energy transfer process, the spectra overlap integrals and Forster's radius is calculated for understanding the dependence of luminance efficiency of the resulted OLEDs on the measured composition ratio.

Published
2009

6. Phosphorescent-sensitized triplet-triplet annihilation in tris(8-hydroxyquinoline) aluminum

Author

Tanaka, Isao and Tokito, Shizuo

Subjects
Light-emitting diodes -- Structure, Light-emitting diodes -- Properties, Photoluminescence -- Research, Quinoline -- Electric properties, Quinoline -- Optical properties, Physics
Abstract

The photoluminescence properties of an amorphous tris(8-hydroxyquinoline) aluminum (Alq3) thin film heavily doped with fac tris(2-phenylpyridine) iridium [Ir(ppy)3] at 8 K is characterized. The triplet energy of Alq3 is estimated to be 2.03 eV from the highest energy peak of the phosphorescence spectrum.

Published
2005

7. Direct interband transitions in tris-(8-hydroxyquinoline) aluminum thin films

Author

X.L. Xu, Tay, B.K., S.P. Lau, X.R. Xu, X.Q. Zhang, Z. Xu, Y.B. Hou, X.H. Chen, and Z.J. Wang

Subjects
Electroluminescence -- Research, Aluminum compounds -- Electric properties, Aluminum compounds -- Optical properties, Quinoline -- Electric properties, Quinoline -- Optical properties, Physics
Abstract

The electroluminescent properties of three different structures (A:ITO/SiO2/Alq3/SiO2/Al, B:ITO/Alq3/SiO2/Al and C:ITO/SiO2/Alq3/Al based on the tris-(8-hydroxyquinoline) aluminum thin films are investigated. Results showed a blue electroluminescence at 457 nm was obtained from device (A) and (B) and the green emission at 518 nm was obtained from device (C).

Published
2001

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