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Kinetic inductance is an important property of carbon nanotubes (CNTs) in high-frequency applications. However, disagreements exist in whether the kinetic inductance of CNTs is present in the diffusive transport regime. In this paper, we fabricated the horizontally aligned multiwalled nanotube (MWNT) arrays on silicon substrates and investigated the inductance properties of the MWNT arrays with different lengths using direct current and radio frequency characterizations. The experimental results show that the electron transport in the CNT arrays is diffusive and that the value of the kinetic inductance is proportional to the length of the CNT arrays. We have experimentally validated that the kinetic inductance theory is applicable to CNTs in the diffusive transport regime. This paper could quell the existing disagreements about the kinetic inductance and provide insights to the potential applications of CNTs as interconnects and on-chip inductors. [ABSTRACT FROM AUTHOR]

A physical-based analytical model for on-chip inductors is developed. A ladder structure is used to model the skin and proximity effects in metal lines. The substrate electric and substrate magnetic losses are accurately modeled by RC and RL ladder structures, respectively. The effective inductance reduction due to the eddy current in the lossy silicon substrate at high frequency is modeled by a negative mutual inductance between the inductor and the substrate. All the model parameters can be calculated from the layout and process parameters. On-chip inductors with different geometries and substrate resistivities were fabricated for the verifications. The measured results are in very good agreement with the proposed model. This generic model can be applied to various substrate resistivities; thus, it is suitable for different technologies. This model can facilitate the design and optimization of on-chip inductors for RF IC applications. [ABSTRACT FROM AUTHOR]

In this letter, the radio-frequency (RF) transmission properties of single-walled carbon nanotubes (CNTs) have been characterized up to the frequency of 12 GHz in a carbon nanotube field-effect transistor (CNFET) configuration using a two-port S-parameter method for the first time. The RF characteristics of the CNTs were measured from the drain to the source of the CNFET. A resistance, inductance, and capacitance model has been proposed, and the element values have been extracted. Without the effect of the parasitics, the RF signal transmission in the CNTs presents no degeneration even at 12 GHz. The capacitive contact between CNTs and metal electrodes is reported. [ABSTRACT FROM AUTHOR]

Carbon nanotube (CNT) has a potential to be used as nanoscale transmission lines and as high-performance passive components in nanoelectronics. In this letter, we discuss single-walled carbon nanotubes (SWNTs) that were grown using a chemical-vapor deposition technique. Both the dc and ac two-terminal resistances were measured and analyzed. The transmission properties of the SWNTs were shown by comparing the S parameters of a device with CNTs with those of a device without a CNT. The radio-frequency characterization of the CNTs was carried out using the network analyzer to frequency of 20 GHz. [ABSTRACT FROM AUTHOR]