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When developing silicon carbide (SiC) devices, the reliability of the internal body diode is an important issue. Stacking faults (SFs) are expanded from basal plane defects by using a body diode. Although it is well known that ON-voltage degradation occurs due to SFs, their effects on dynamic reliability have not been studied well. Furthermore, including the effects of SFs, there are not many reports about the dynamic reliability of SiC-MOSFETs. In this paper, a double-pulse switching test using 3.3-kV SiC-MOSFETs was carried out to clarify the failure mechanism of the switching operation of SiC-MOSFETs and effects of SFs on the safe operation area (SOA). Before the switching test, current stress was applied to the body diode of the devices under test (DUTs) to expand the SFs. The circuit configuration was half-bridge type, and a double-pulse gate signal was applied to the lower arm DUT. The switching voltage was 1.8 kV, and the switching current increased at about 8-A steps to failure. As a result, reverse recovery SOA (RRSOA) reliability decreased depending on the amount of SFs in the SiC-MOSFET. Because RRSOA failure was caused by avalanche due to the hole concentration during reverse recovery and the SFs raised local current density, reverse bias SOA (RBSOA) hardly decreased even if SFs containing SiC-MOSFETs were used. This is because RBSOA failure was caused by degradation of the gate isolation layer due to overheating and the temperature coefficient of the SFs electric resistance indicated negative. [ABSTRACT FROM AUTHOR]