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Insulated-gate bipolar transistor (IGBT) modules and dc-link capacitors are important parts in the majority of power electronic converters which contribute to cost, size, and failure rate on a considerable scale. This paper presents an online condition monitoring method for both IGBT modules and dc-link capacitors of power converters based on short-circuit current of an IGBT module, which is a good condition indicator according to the theory analysis. The failure prediction of dc-Link capacitor is realized by equivalent series resistance, which can be calculated by short-circuit current and a step voltage, and the bond wires fatigue can also be identified by the short-circuit current. The proposed method is capable for detecting small changes in the failure indicators of IGBT modules and electrolytic capacitors, and its effectiveness is validated by a confirmatory experiment. The novelty of the proposed method is that the degradations of IGBT modules and capacitors can be identified simultaneously, and has the merits of low cost and circuit simplicity [ABSTRACT FROM PUBLISHER]

Finding and replacing the defective insulated-gate bipolar transistor (IGBT) module timely by monitoring the ageing state of IGBT can improve the reliability of a power converter and reduce the loss caused by IGBT failure. A method for detecting the condition of bond wires in IGBT module by identifying the short-circuit current of IGBT module is presented in this paper. It is based on the fact that parasitic parameters of IGBT module are affected by the local damage induced by ageing over time, and these changes can be easily detected by monitoring the difference of short-circuit current. The study results indicate that short-circuit current of IGBT module decreases with module ageing over time, and the difference of short-circuit current caused by junction temperature is much smaller than that caused by bond wires fatigue on a specific gate driving voltage. Therefore, the IGBT module in the power converter can be diagnosed by detecting the difference of short-circuit current without considering the effects of junction temperature. Finally, a confirmatory experiment is carried out, and the correctness of the method proposed in this paper is verified. [ABSTRACT FROM AUTHOR]

Condition monitoring is a cost-effective means to reduce the unscheduled maintenance cost of insulated gate bipolar transistor (IGBT) modules. The junction to case thermal resistance $R_{\mathrm {thjc}}$ is considered as a critical health indicator of IGBT module solder layer. However, thermal interface materials’ (TIMs) deterioration will not only reduce the heat dissipation performance but also affects the accuracy of $R_{\mathrm {thjc}}$ monitoring of IGBT modules. This article investigates the effect of thermal grease deterioration on $R_{\mathrm {thjc}}$ monitoring of IGBT module. First, it is found that the thermal grease deterioration will lead to the decrease of monitored $R_{\mathrm {thjc}}$ of IGBT module under the same health status of IGBT solder layer, despite that the thermal resistance of TIM increasing as deterioration of the TIM takes place. That is, the same monitored increment ratio of $R_{\mathrm {thjc}}$ caused by the solder fatigue may correspond to different health status of the IGBT module, which cannot accurately reflect its actual health status. Then, a compensation strategy for thermal resistance monitoring based on the TIM aging rate is proposed, which uses the established mapping relationship to decouple the negative coupling part of TIM degradation. The compensated thermal resistance can better reflect the actual health status of the IGBT module and approximately eliminate the negative impact. Finally, the feasibility of the proposed compensation strategy is verified by finite element model (FEM) analysis and experiments. [ABSTRACT FROM AUTHOR]

IGBT power module is the key component of the power electronic converter, but it has the lowest reliability. The junction temperature is the crucial factor which affects power module’s reliability. To some extent, the power handling capability of the converter depends on the thermal stress of the power module. Thermal management is an effective method to improve the reliability of power device, as well as enhance the power capability. For this purpose, this paper introduces the reliability design to the power converter’s traditional compensation controller design for the first time. A new concept of generalized dual-loop controller, which includes temperature control loop and electric power control loop, is proposed. The reliability and stability of the system are both considered, with the help of the hybrid controller, the power converter can operate steadily with higher reliability. The novelty of this paper is to improve the thermal control method of carrier frequency adjustment through experimental implementation during the full life cycle of the converter. The target is to control the temperature variation to be almost a constant value as well as extend the lifetime of the converter. IR sensor is used to measure the chip temperature of the unpackaged IGBT module. The temperature variation and the average temperature are all considered in thermal management, from the reliability improvement point of view. At last, the idea is digital implemented based on a varying load of power inverter system with real-time measurement of the chip’s surface temperature. [ABSTRACT FROM AUTHOR]

Chip fatigue inside an insulated gate bipolar transistor (IGBT) module is a kind of incipient defect. It can be considered as an indication of the impending failure, and is utmost important for the safe operation of IGBT modules. Therefore, monitoring the chip fatigue is one of crucial measures to enhance the operating reliability of IGBT modules. This paper presents a prognostic approach for the chip fatigue based on grey relational analysis (GRA), which uses dynamic change of the gate voltage as precursor parameter. This dynamic change is caused by aging of the intrinsic parasitic elements involved in gate drive circuit, which reflect the advent of chip fatigue. Grey relational grade is employed in this proposed prognostic approach to quantify the extent of those dynamic changes by little data, and find out potential chip fatigue. Then the operator would have a chance to schedule the maintenance and replace defective IGBT modules timely to avoid wear out. So it can be seen as a prefault diagnostic method. Finally, a confirmatory experiment is also carried out, and the correctness of the proposed approach is verified. [ABSTRACT FROM AUTHOR]