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The absorptivity of solar thermal absorber materials affects the heliothermal conversion efficiency of concentrated solar power systems. The solar absorbing ceramics were prepared by the fixed mixture of bauxit, Fe2O3, and TiO2 with adding CuO in different percentages. The absorptivity and thermal shock resistance with the effect of adding CuO in different percentages were studied. Fe2O3 and TiO2 have excellent optical properties, and CuO decreases the material's band gap to boost the electronic transition and increase the material absorptivity. The results showed that the material is sintered at 1380°C with an excellent absorptivity of 94.00% in the spectrum range of 0.3–2.5 μm, and the bending strength is 132.94 MPa. The bending strength was increased by 21.07% after 30 thermal shock cycles (1000°C‐room temperature, air cooling). The liquid phase facilitates the synthesis of hercynite with excellent high temperature properties. The hercynite improves the thermal shock resistance of the material. [ABSTRACT FROM AUTHOR]

Zirconia‐corundum‐mullite composites were prepared from andalusite, ZrO2, and α‐Al2O3 and evaluated for application as solar thermal storage materials in this study. The effects of ZrO2 concentration (0–25 wt%) and sintering temperature(1500–1650°C) on the bending strength, phase composition, microstructure, dimensional stability, and thermal shock resistance of the samples were investigated. The results showed that sample C2 (containing 10 wt% ZrO2) sintered at 1600°C exhibited the best properties. A portion of Y2O3 existed in ZrO2, which excited a small amount of t‐ZrO2 in the sample after sintering, while the other portion of Y2O3 was separated from ZrO2 and participated in the formation of a high‐temperature liquid phase. The liquid phase reduced the dimensional stability of the sample. However, the liquid phase could also promote sintering, reducing the optimal sintering temperature, with lower sintering temperatures increasing the dimensional stability of the sample. Once again, the C2 sample exhibited the highest thermal shock resistance, with a strength loss of 2.76 MPa after 30 thermal shock tests. The thermal storage density(25–1100°C) of C2 was 1121 kJ/kg. In summary, sample C2 exhibits a high degree of dimensional stability and thermal shock resistance and can thus be used as a reliable solar thermal storage material. [ABSTRACT FROM AUTHOR]

High-temperature stable thermal storage materials are urgently needed to meet the demand for solar thermal power generation. Herein, Cu–20Si alloy-corundum ceramic composite thermal storage materials are prepared. The thermal storage performance of the composite, and the erosion resistance of ceramic matrix to alloy are investigated during high-temperature (1000 °C) service for 1000 h. The results show that the latent heat of Cu–20Si alloy is increased by 130.76 % to 201.2 kJ/kg compared with the original. Meanwhile, the alloy forms a dense transition layer on the ceramic matrix surface by melting and spreading. Furthermore, the ceramic matrix shows superior erosion resistance to the alloy, owing to the dense structure of ceramic and no chemical reactions between the alloy and ceramic matrix. Finally, test results of long-time service confirm the stability of the composite, which can be used stably for high temperature thermal storage. [ABSTRACT FROM AUTHOR]

Nitrogen-polar (N-polar) III-nitride has natural advantages in the fabrication of electronic devices. In this work, unintentionally doped N-polar GaN films were grown on sapphire substrates by metalorganic chemical vapor deposition. By optimizing the growth parameters including growth temperature, pressure, and V/III ratio, N-polar GaN with a relatively high sheet resistivity of 3.6 × 105 Ω/sq was achieved. The secondary ion mass spectroscopy and x-ray diffraction measurement results demonstrate that the increased carbon impurity concentration is primarily responsible for the high resistivity. Moreover, N-polar GaN/Al0.25Ga0.75N heterojunctions were deposited on the high-resistivity N-polar GaN template. An extremely high-density two-dimensional electron gas of up to 1.12 × 1013 cm−2 was realized at the interface between the Al0.25Ga0.75N and the GaN. It is reasonably believed that the experimental results obtained here are beneficial for the development of high-performance N-polar GaN-based electronic devices. [ABSTRACT FROM AUTHOR]

Thermal storage materials are typically made of materials with high thermal storage density, high thermal conductivity and high temperature stability. In this study, corundum-mullite composite thermal storage ceramics were prepared by solid-phase sintering using widely available and low-cost α-Al 2 O 3 , kaolin, and quartz as raw materials. The effects of silicon source and Al 2 O 3 /SiO 2 ratio on the physical properties and structural properties of corundum-mullite composite ceramics were investigated. The results showed that the A3 sample (α-Al 2 O 3 : 85.77 wt%, kaolin: 14.23 wt%) after sintering at 1650 °C had the excellent performance, with thermal conductivity of 15.01 W (m K)−1 (25 °C), thermal storage density of 965.15 kJ kg−1, and bending strength of 145.9 MPa. The multiple ions introduced by kaolin can effectively promote the liquid-phase mass transfer at high temperatures, accelerate the diffusion rate of Si4+, increase the growth rate of mullite, and accelerate the densification process of the samples, which in turn improves the physical properties of the samples. When used in a solar thermal storage system, the A3 sample per unit volume can provide 911.53 kW h of electricity to the grid, saving 112.12 kg of coal and reducing 358.78 kg of CO 2 emissions. [ABSTRACT FROM AUTHOR]

• A two-step high-temperature growth method was adopted to grow N-polar GaN. • The influence of growth parameters on the properties of N-polar GaN was analyzed. • N-polar GaN with both smooth surface and high crystalline quality was achieved. Normally, nitrogen-polar (N-polar) GaN films with better crystalline quality tend to have poor surface morphology, whereas those with good surface morphology suffer from degraded crystalline quality. In this work, we use a two-step high-temperature (HT) growth method to grow N-polar GaN films on vicinal c-plane sapphire substrates by metalorganic chemical vapor deposition, which can effectively solve the irreconcilability between surface morphology and crystalline quality. The GaN film consists of two GaN layers (HT-GaN 1 and HT-GaN 2), which were grown at different growth parameters, respectively. The 300-nm-thick HT-GaN 1 layer was directly grown on the low-temperature GaN buffer layer under the higher V/III ratio and pressure at 1040 °C to reduce dislocation density. The 1.7-μm-thick HT-GaN 2 layer was grown under the lower V/III ratio and pressure to improve surface morphology. Besides, the growth temperature of HT-GaN 2 layer was ramped up to 1070 °C to suppress the yellow-band luminescence. Finally, high-quality N-polar GaN films with smooth surface morphology and high crystalline quality were obtained, for which the full-width at half-maximum values of (0002) and (10 1 ¯ 2) planes X-ray diffraction rocking curves are 131 and 390 arcsec, respectively, the root mean square roughness over an area of 20 × 20 μm2 is 1.88 nm, and the residual compressive stress is as low as 0.025 GPa. It is reasonably believed that this work provides an effective approach to preparing high-quality N-polar GaN films for the application of N-polar nitride devices. [ABSTRACT FROM AUTHOR]