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A fundamental understanding and advancement of nanopatterning and nanometrology are essential in the future development of nanotechnology, atomic scale manipulation, and quantum technology industries. Scanning probe-based patterning/imaging techniques have been attractive for many research groups to conduct their research in nanoscale device fabrication and nanotechnology mainly due to its cost-effective process; however, the current tip materials in these techniques suffer from poor durability, limited resolution, and relatively high fabrication costs. Here, we report on employing GaN nanowires as a robust semiconductor material in scanning probe lithography (SPL) and microscopy (SPM) with a relatively low-cost fabrication process and the capability to provide sub-10 nm lithography and atomic scale (

H depassivation lithography is a process by which a monolayer of H absorbed on a Si(100) 2x1 surface may be patterned by the removal of H atoms using a scanning tunneling microscope. This process can achieve atomic resolution where individual atoms are targeted and removed. This paper suggests that such a patterning process can be carried out as a digital process, where the pixels of the pattern are the individual H atoms. The goal is digital fabrication rather than digital information processing. The margins for the read and write operators appear to be sufficient for a digital process, and the tolerance for physical addressing of the atoms is technologically feasible. A digital fabrication process would enjoy some of the same advantages of digital computation; namely high reliability, error checking and correction, and the creation of complex systems.

We image frequency-modulated single-molecule optical absorption using a scanning tunneling microscope as the detector (SMA−STM). As a first example of the technique, a semiconducting carbon nanotube adsorbed on a silicon surface is studied. Excitation is achieved using laser amplitude as well as frequency modulation, and these two complementary approaches are compared. Detection is achieved via the resulting change in tunneling current through the excited molecule. We distinguish three mechanisms, direct, relaxed, and bolometric, for detecting single-molecule absorption spectra. Kinetic models for these mechanisms as well as for surface heating are presented. The latter effect can be eliminated by frequency modulation, keeping the laser power density on the surface constant.

The atomic and electronic structures of pyramidal model STM tips of transition metals (W, Rh, Pd, Ir and Pt) were investigated using density functional theory (DFT) method. The calculated density of states show that d electrons of the apex atoms in the M4 (M = W, Rh, Pd, Ir, Pt) model tips behave differently near the Fermi level, with the dz2 state being dominant only for W tip. The electronic structures of pyramid structures of W and Pd single-atom tips with larger sizes are studied and compared. The density of states of Pd apex atom and W apex atom show different occupation of d-bands leading to asymmetric density of states for Pd tip. The asymmetric tunneling currents measured by W and Pt-Ir STM tips are explained by the calculated electronic structures of W and Pd model tips.

We report single molecule laser absorption by carbon nanotubes stamped under ultrahigh vacuum onto Si(100)2x1:H surfaces. Absorption is detected by scanning tunneling microscopy. Images are obtained with and without modulated laser excitation using lock-in amplification and a rear-illumination geometry to reduce thermal effects. Noise appears at topographic edges and is analyzed by a quantitative model in terms of scan speed, mechanical instabilities, and feedback current fluctuations at the edge of the nanotubes. Noise due to mechanical instabilities is shown to persist even in the limit of slow scan speed.

A hydrogen passivated Si(100)-2/spl times/1 surface is studied using ultrafast laser excitation with a novel total internal reflection geometry. The incoherent tip and sample heating dynamics are studied, and it is shown that as long as the STM feedback is faster than the heating and cooling processes, atomic scale imaging can be achieved, even in the presence of significant tip and sample expansion and contraction. This opens the door for studies of surface processes on the ultrafast timescale.

Reducing the scale of etched nanostructures below the 10 nm range eventually will require an atomic scale understanding of the masks being used in order to maintain exquisite control over both feature size and feature density. Here, the authors demonstrate a method for tracking atomically resolved and controlled structures from initial template definition through final nanostructure metrology, opening up a pathway for top–down atomic control over nanofabrication. First, hydrogen depassivation lithography is performed on hydrogen terminated Si(100) using a scanning tunneling microscope, which spatially defined chemically reactive regions. Next, atomic layer deposition of titanium dioxide produces an etch-resistant hard mask pattern on these regions. Reactive ion etching then transfers the mask pattern onto Si with pattern height of 17 nm, critical dimension of approximately 6 nm, and full-pitch down to 13 nm. The effects of linewidth, template atomic defect density, and line-edge roughness are examined in the context of controlling fabrication with arbitrary feature control, suggesting a possible critical dimension down to 2 nm on 10 nm tall features. A metrology standard is demonstrated, where the atomically resolved mask template is used to determine the size of a nanofabricated sample showing a route to image correction.

A method to enhance the speed of scanning tunneling microscope based hydrogen depassivation lithography is presented. In order to maximize patterning speed while maintaining the capability to retain atomic precision with respect to line edges and feature positions, a multimode technique is used where the modes are characterized either by large or small spot sizes. For areas where atomically precise lithography is required, a tip sample bias of 4–4.5 V is used. In other areas, such as in the center of a large solid pattern, large (∼7 nm) linewidth field emission lithography with a tip sample bias of 8 V is used. A method to generate an optimized set of writing vectors for each mode is described and applied to a fundamental square pattern on the Si(100) surface with an experimental 78% write time reduction. An analysis of the optimal vectors indicates that patterning times may be reduced by up to 95%.

We present a study addressing the effectiveness of a monolayer of hydrogen as the lithographic resist for controlled three-dimensional (3D) growth of nanostructures on the Si(100) surface. Nanoscale regions on the H-terminated Si(100) were defined by H-desorption lithography via the biased tip of a scanning tunneling microscope (STM) to create well-defined regions of surface “dangling bonds,” and the growth of 3D nanostructures within these regions was achieved using a simultaneous disilane deposition and STM H-desorption technique. We demonstrate that 3D growth is strongly confined within STM depassivated regions while unpatterned H:Si(100) regions are robust against adsorption of the precursor molecules.

Lithographic precision is as or more important than resolution. For decades, the semiconductor industry has been able to work with ±5% precision. However, for other applications such as micronanoelectromechanical systems, optical elements, and biointerface applications, higher precision is desirable. Lyding et al. [Appl. Phys. Lett. 64, 11 (1999)] have demonstrated that a scanning tunneling microscope can be used to remove hydrogen (H) atoms from a silicon (100) 2 × 1 H-passivated surface through an electron stimulated desorption process. This can be considered e-beam lithography with a thin, self-developing resist. Patterned hydrogen layers do not make a robust etch mask, but the depassivated areas are highly reactive since they are unsatisfied covalent bonds and have been used for selective deposition of metals, oxides, semiconductors, and dopants. The depassivation lithography has shown the ability to remove single H atoms, suggesting the possibility of precise atomic patterning. This patterning proces...