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A new high-quantity in-line dc-magnetron sputter deposition metallization technique for the formation of grafted multilayer thin film modules was presented. The technique produced devices with high reliability and low defect levels and provided layered metal systems with either discrete or phased interfaces. When plasma optimization was used, deposit thickness variation over the deposition area was effectively controlled throughout the life of the targets.

Electronic systems that use rugged lightweight plastics potentially offer attractive characteristics (low-cost processing, mechanical flexibility, large area coverage, etc.) that are not easily achieved with established silicon technologies. This paper summarizes work that demonstrates many of these characteristics in a realistic system: organic active matrix backplane circuits (256 transistors) for large ([approximately equals] 5 x 5-inch) mechanically flexible sheets of electronic paper, an emerging type of display. The success of this effort relies on new or improved processing techniques and materials for plastic electronics, including methods for (i) rubber stamping (microcontact printing) high-resolution ([approximately equals] 1 [micro]m) circuits with low levels of defects and good registration over large areas, (ii) achieving low leakage with thin dielectrics deposited onto surfaces with relief, (iii) constructing high-performance organic transistors with bottom contact geometries, (iv) encapsulating these transistors, (v) depositing, in a repeatable way, organic semiconductors with uniform electrical characteristics over large areas, and (vi) low-temperature ([approximately equals] 100 [degrees] C) annealing to increase the on/off ratios of the transistors and to improve the uniformity of their characteristics. The sophistication and flexibility of the patterning procedures, high level of integration on plastic substrates, large area coverage, and good performance of the transistors are all important features of this work. We successfully integrate these circuits with microencapsulated electrophoretic 'inks' to form sheets of electronic paper.

Silicon carbide (SiC) is a wide-band gap semiconductor and one of the more promising materials for use in high-temperature high-power devices because of its thermal chemical, and mechanical stability. Still, [...]