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Due to its short radiation length, moderate light output (8000‐9000 photons/MeV), high density (7.13 g cm−3), and non‐hygroscopicity, etc., Bi4Ge3O12 (BGO) material has been widely utilized as an advanced scintillator for irradiation detection. However, pure BGO cannot meet the requirements for future physics experiments and state‐of‐art industrial facilities coupled with a silicon photomultiplier (SiPM) due to its slow response time, poor radiation resistance, and excessive light output. Herein, a Ce‐doping strategy is reported for efficiently improving the overall performance (e.g., irradiation resistance, decay time, radioluminescence, and light output) of BGO that can be expectedly applied in future high energy physics detection. Ce‐doped BGO (BGO:Ce) displays higher radiation resistance ability under 10 h UV irradiation (97% of original) and a faster fluorescence lifetime (269 ns), superior to pure BGO. Furthermore, BGO:Ce shows ≈30% luminescence intensity of pure BGO, well eliminating the oversaturation of SiPM coupled with scintillation detectors. Theoretical calculations imply that an intense competition between electron or hole traps and Ce ions (Ce3+, Ce4+) can effectively reduce the concentration of color centers, thus enhancing irradiation resistance ability. [ABSTRACT FROM AUTHOR]

1 at% Ce3+-doped Gd3Ga2Al3O12 (GGAG) single crystals were grown by an optical floating zone (OFZ) method and a traveling solvent floating zone (TSFZ) method. To reveal their structure and chemical composition homogeneity, X-ray diffraction (XRD) and high-resolution inductively coupled plasma atomic emission spectrometry (ICP-AES) were conducted on the as-grown Ce:GGAG crystals at 4 different positions along the growth direction. Compared with the Ce:GGAG crystals grown by the OFZ method (Ce:GGAG-OFZ), the Ce:GGAG crystals grown by the TSFZ method (Ce:GGAG-TSFZ) presented better Ce3+ distribution homogeneity which varied from 0.21 to 0.29 at%. However, the segregation coefficient of Ce3+ in Ce:GGAG-OFZ was found to be higher than that in Ce:GGAG-TSFZ, revealing a different solidification rate between them. The comparison study shows that the photoluminescence (PL) intensity of Ce:GGAG-TSFZ is about twice higher than that of Ce:GGAG-OFZ and the maximum light yield (LY) of 35 340 photons per MeV also occurs in the former. Trap depths were measured to be 0.70 eV and 0.98 eV by TL glow curves. The LY value of Ce:GGAG-TSFZ along the growth direction fluctuated to a lesser extent with respect to that of Ce:GGAG-OFZ; the latter decreases gradually along the growth direction. It is concluded that the TSFZ method helps to improve the homogeneity of crystal composition when growing crystals with multiple compositions or incongruent compounds. [ABSTRACT FROM AUTHOR]

Ce0.03Gd2.97Ga2Al3O12 (Ce:GGAG) single crystals were successfully grown by the traveling solvent floating zone method (TSFZ). A series of compositions, where the mole ratio is Gd2O3 : Al2O3 = 25 : 75, 27 : 73, 29 : 71, were investigated as solvents. The 25 mol% Gd2O3-75 mol% Al2O3 solvent component was found to be the most effective in stabilizing the molten zone to obtain a crystal rod with uniform diameter. The crystal cracks were relieved clearly due to the improved molten zone stabilization during the crystal growth process. XRD patterns of the obtained crystals prove the garnet structure without any evident second phase. The characteristic Ce3+ emission located at around 540 nm was presented in the photoluminescence and X-ray excited luminescence spectra. The scintillation light yield reaches up to 34 132 pho MeV−1 and scintillation decay time was optimized to 64 ns with a high fast decay component of about 85%. The TSFZ method demonstrated the growth feasibility of Ce:GGAG crystals that have an incongruent-melting trend with lower Ga/Al ratio in the compositions. [ABSTRACT FROM AUTHOR]

The study deals with the use of different amounts of MgO or tetraethyl orthosilicate (C 8 H 20 O 4 Si, TEOS), from 0.04 wt %, 0.06 wt %, 0.08 wt %, 0.4 wt %, 0.6 wt % to 0.8 wt %, respectively, as additional sintering aids during the vacuum sintering of transparent Ce3+ doped Y 3 Al 5 O 12 (Ce:YAG) ceramics to investigate their effect on microstructure and luminescence properties. A comparative study was carried out by using X - ray diffraction, scanning electron microscopy/energy dispersive X - ray spectroscopy, optical and photo-luminesce spectra, as well as electroluminescent spectra. The dominant garnet phase was obtained even when adding 0.8 wt % of MgO or TEOS, while adding MgO led to finer average grain size (∼ 5 - 10 μm) and more homogenous distribution compared to TEOS (∼ 20 - 25 μm) in Ce:YAG ceramics. Adding a large amount of MgO was found to result in the segregation of MgO in Ce:YAG ceramics, while an excess of TEOS led to the segregation of Al 2 O 3. A strong absorption peak at 308 nm was observed in Ce:YAG ceramics with MgO sintering aids, which was ascribed to the existence of Ce4+ induced by a charge compensation effect of Mg2+. The optimum transmittance reached 80% @ 800 nm in Ce:YAG ceramics when adding 0.6 wt % TEOS, which also exhibited a maximum luminous efficacy of 106 lm/W. Si4+ was experimentally proved to have a better optimization effect on luminous efficacy compared to Mg2+. • MgO or TEOS (C 8 H 20 O 4 Si) was added as additional sintering aids in a wide amount range. • MgO proves to have distinct inhibit effect on the grain growth. • Better luminous efficacy were observed in ceramics with TEOS additives. [ABSTRACT FROM AUTHOR]

Abstract: Ce-doped La2Si2O7 (LaPS:Ce) polycrystalline powders were successfully prepared through a sol–gel technique at lower temperature. The X-ray diffraction measurements confirmed that the Ce-doped powders were a kind of monophase solid solution. Photoluminescence, radioluminescence, and decay time characteristics of the prepared powders have been systematically investigated and discussed. It was noticed that the LaPS:Ce material shows an excellent light yield in comparison with commercial Y3Al5O12:Ce (YAG:Ce) powders under X-ray excitation. The LaPS:Ce sample demonstrated a high temperature stability of luminescence yield up to 250°C and a short decay time. Therefore, the LaPS:Ce powder is proposed to be a novel and promising scintillator material. [Copyright &y& Elsevier]

In this work, an anion-alloying strategy using chloride substitution is used to improve the gamma response performance of cutting-edge Cs 2 LiLaBr 6 :Ce single crystal scintillators. Single crystals of Cs 2 LiLa(Br , Cl) 6 :Ce (CLLBC:Ce) with a size of Ф12 mm × 50 mm were successfully grown by the Bridgman method. The effects of chloride substitution amount on crystal structure, band structure, luminescence properties and the scintillation properties were systematically investigated. The light yield and energy resolution of CLLB:Ce were enhanced as the increase of Cl− content. The highest light yield and optimal energy resolution were achieved on the Cs 2 LiLaBr 4 Cl 2 :Ce, about 86% of the commercial LaBr 3 :Ce single crystal and 4.1% at 662 keV. On a basis of the results of first-principle calculation and pure optical method, the band structures of Cs 2 LiLa(Br,Cl):Ce were constructed, indicating a tendency of band-gap to increase as the Cl− content increases. The origin of light yield improvement was also proposed. • The strategy of chloride substitution is used to improve the performance of Cs 2 LiLaBr 6 :Ce single crystal scintillators. • The results of first-principle calculation and pure optical method indicate that the band-gap becomes bigger as the Cl− content increases. • Cs 2 LiLaBr 4 Cl 2 :Ce shows the highest light yield and optimal energy resolution, about 86% of the commercial LaBr 3 :Ce single crystal and 4.1% at 662 keV. • The origin of light yield improvement was also proposed. [ABSTRACT FROM AUTHOR]