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Start Over Author "Gösele, U. M." Topic secondary ion mass spectrometry
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1. Disordering in 69GaAs/71GaAs isotope superlattice structures.

Author

Tan, T. Y., You, H. M., Yu, S., Gösele, U. M., Jäger, W., Boeringer, D. W., Zypman, F., Tsu, R., and Lee, S.-T.

Subjects
GALLIUM arsenide, SUPERLATTICES, MOLECULAR beam epitaxy, SECONDARY ion mass spectrometry, TRANSMISSION electron microscopy
Abstract

Investigates gallium self-diffusion in gallium arsenide by disordering reactions. Application of undoped gallium arsenide (GaAs)/GaAs isotope superlattice structures grown by molecular beam epitaxy; Characterizations by secondary ion mass spectrometry, capacitance-voltage and transmission electron microscopy; Cause of the release of Ga vacancies into the superlattice layers.

Published
1992
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