Search

Abstract: The ion implantation process of Mn doped Si is examined with particular attention on the role of implantation temperature, implantation induced amorphisation and implantation damaged Si lattice recovery. It seems likely that Mn prefers to accumulate around the surface of Si nanometer scale crystals. Further work on reducing Mn segregation is proposed. [Copyright &y& Elsevier]

Abstract: Recent controversial reports of possible above room temperature ferromagnetism in high dose Mn implanted Si samples was the motivation for examining this interesting Mn–Si binary system. 50keV Mn+ ions were implanted into n-type CZ (001) Si wafers up to 5×1016 ions/cm2 at room temperature, leading to the formation of disordered surface Mn/Si layers. The Mn implanted samples were subjected to further treatments by pulsed laser annealing in air. The distribution and evolution of the Mn dopant in the Si host upon thermal treatments is characterized by Rutherford backscattering, cross-sectional transmission electron microscopy and Raman scattering measurements. [Copyright &y& Elsevier]

Abstract: Both Rutherford backscatterings of 4He+ beams and non-Rutherford backscatterings of 4He+ and H+ beams have been used in this study to investigate the depth profiles of B dopant in Mg target upon B implantation and post annealing. Primitive data analysis suggests an enhanced diffusion of surface C contaminant during the B implantation process, together with enhanced surface oxidation upon implantation and thermal annealing in flowing N2 atmosphere. [Copyright &y& Elsevier]