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We investigated the waveguide loss and transmission characteristics for optical interconnection using vertical-cavity surface-emitting lasers (VCSELs) and multimode polymeric waveguide circuits with crossings. The excess loss with 100 crossings is 2.2 dB when the image magnification from a VCSEL to a waveguide is 2.3. We obtained error-free (i.e., bit error rate <10-11) optical interconnection at 1.0625 Gbps regardless of the number of crossings or the magnification. These results suggest the practicality of large-scale optical interconnection between VCSEL-based smart-pixel chips using multimode waveguides with more than 100 crossings [ABSTRACT FROM PUBLISHER]

We demonstrate the polarization stability of 850-nm-wavelength vertical cavity surface-emitting lasers (VCSELs) grown on (311)B substrates under continuous-wave (CW) and dynamic operation. To clearly verify the polarization stability of VCSELs on (311)B substrates due to the anisotropic optical gain, the characteristics of both VCSELs on (311)B and (100) substrates were compared experimentally. Under CW operation, very small difference in both orthogonal polarization suppression ratio and the distribution of polarization direction was observed between VCSELs on (311)B and (100) polyimide-buried structures. On the other hand, significantly larger orthogonal polarization suppression ratio was obtained for VCSELs on (311)B substrates than those on (100) substrates under zero-bias modulation. Time-dependent orthogonal polarization suppression ratio measurements also showed that the orthogonal polarization suppression ratios of the VCSEL on (311)B substrates were more stable than those on (100) substrates. The data transmission characteristics also indicate large differences in the dependence of the bit error rate on bias current and the power penalty between polarization resolved and unresolved systems between VCSELs on (311)B and (100) substrates. The beneficial effect of the polarization stability of VCSELs on (311)B substrates due to their anisotropic optical gain is clearly demonstrated [ABSTRACT FROM PUBLISHER]

We report a record low threshold current of 1.55-μm vertical-cavity surface-emitting laser (VCSEL). Thin-film wafer-fusion technology enables InP-based buried heterostructure VCSELs to be fabricated on GaAs-AlAs distributed Bragg reflectors. Threshold current density is independent of mesa size, and a 5-μm VCSEL exhibits a threshold current as low as 380 μA at 20°C and a single transverse mode up to the maximum optical output power under continuous-wave operation [ABSTRACT FROM PUBLISHER]

High output power of about 800 mW in a chip and stable operation for over 14 000 h under 225 mW at 50°C have been achieved in 1.06 µm InGaAs strained-quantum-well laser diodes, which were realised by low-temperature growth of the InGaAs well layers. [ABSTRACT FROM AUTHOR]