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Thermomechanical behavior has an important effect on reliability and lifetime of high-power diode lasers (HPDLs). Finite-element analysis (FEA) model and analytical solution model of the conduction-cooled package (CS) HPDL are established to analyze the thermomechanical behavior including normal stress, shearing stress, and displacement in reflowing process and working process. Moreover, in order to simulate and analyze the thermomechanical behavior in total process, reflowing thermal stress and displacement are considered as the residual stress and the initial condition of working process. We find that shearing stress is the origin of other thermomechanical behavior due to coefficient thermal expansion (CTE) mismatch, while both CTE mismatch and temperature gradient cause the thermal stress and displacement in working process. Although thermal stresses and displacement induced in reflowing process are larger than working process, the working process has great impact on smile and causes much worse total smile. The influence of different working temperatures on smile is also studied in total process with analytical solution, FEA, and experiment. For analytical solution, the total smile value is inversely proportional to the working temperature, while for FEA the smile value is proportional to the working temperature and FEA result accords with experimental result. [ABSTRACT FROM PUBLISHER]

The package structure critically influences the major characteristics of semiconductor lasers, such as thermal behavior, output power, wavelength, and far-field distribution. In this paper, a new single emitter package structure called F-mount is designed and compared with the conventional package structure C-mount. The influence of package structure on their performances is characterized and analyzed. The thermal resistances of lasers with different package structures are calculated through simulation, and are contrasted with experimental results. Some devices are also tested for the maximum output power level. Under the continuous wave (CW) condition, the maximum power of F-mount reaches 12.6 W at 808 nm while the output power only reaches 10.9 W for C-mount. Under the condition of 0.5% duty cycle (100 \mus, 50 Hz), the catastrophic optical mirror damage level reaches 58.7 W at 74 A for F-mount, and 54.8 W at 57 A for C-mount are reported for the first time. It is experimentally found that there is an obvious wavelength difference between the two type structure lasers: about 1.37 nm in CW mode and 2.89 nm in quasi CW mode. Theoretical analysis shows that red-shift and blue-shift is a result of external strain in the package process of F-mount and C-mount, respectively. It is also found that the package structure has an effect on the divergence angle of slow axis far fields, but little impact on that of fast axis far fields. The analysis shows that package structure has a strong influence on the performance of the laser; therefore, the package should be optimized to achieve better performance for some special applications. [ABSTRACT FROM AUTHOR]

Abstract: A method for the simulation and optimization of the source-field distribution of a diode bar laser (DBL) beam by using the stimulated annealing and experimental data in the far field is proposed and illustrated by an example of a DBL JOLD-60-CPNN-1L, showing the applicability of the method. As compared with the previous models, this method is not restricted to the type of diode lasers (DLs), and the reconstructed results are accurate so long as the experimental data are sufficiently accurate. [Copyright &y& Elsevier]