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We propose the use of indium tungsten oxide (IWO) as a channel material for thin-film transistors (TFTs). In the present study, an IWO film was deposited at room temperature by means of DC magnetron sputtering and then annealed at 100 °C in N2 prior to formation of Au source and drain electrodes. Analysis using X-ray diffraction and transmission electron microscopy revealed that the film remained amorphous even after the post-deposition annealing treatment. TFTs fabricated using a Si substrate as a back-gate electrode showed good performance, with a saturation field-effect mobility of 19.3 cm2 · V-1 · s-1, an on/off current ratio of 8.9 × 109. [ABSTRACT FROM AUTHOR]

Highlights: [•] Optimal contacts should have smallest size but possess minimum contact effects. [•] Six times of semiconductor film thickness is found to be optimal for contact length. [•] It increases in nanoscale channels with more hopping and anisotropic transport. [•] This optimal contact length is independent of semiconductors and variable mobility. [ABSTRACT FROM AUTHOR]

Abstract: Large surface roughness is a major obstacle for electronic systems fabricated on paper substrates. Here, a mixture solution of organic semiconductor and polymer dielectric was spin-coated on paper substrate with a patterned wettability. This spin-coating process produced organic crystals and a very smooth semiconductor/dielectric interface with a low trap density in well-confined patterns. Despite the large roughness of the paper substrate, the fabricated transistor arrays exhibited high performance with a field-effect mobility reaching 1.3cm2/Vs and an on/off ratio of 108. The presented results offer a simple fabrication method for the current rapidly developing technology of paper electronics. [Copyright &y& Elsevier]