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This study presents a physics-based compact model of the integrated gate-commutated thyristor (IGCT) with multiple effects for the high-power application. The proposed model has both acceptable accuracy and computation time requirement, which is suitable for system level circuit simulation and IGCT's whole wafer modelling work. First, the development of IGCT model is discussed and the one-dimensional phenomenon of IGCT is analysed in this study. Second, a physics-based compact model of IGCT is proposed. The proposed model of IGCT includes multiple physical effects that are crucial to IGCTs working in high-power applications. These physical effects include the impact ionisation effect, moving the boundary of the depletion region during the punch-through and the local lifetime region. The Fourier series solution is applied to the ambipolar diffusion equation in the base region. Third, the proposed model is implemented in Simulink and compared with the model in Silvaco Atlas, a finiteelement tool. Finally, the proposed compact model of IGCT is validated by experiments. [ABSTRACT FROM AUTHOR]

compact trench-gate insulated-gate bipolar transistor model that captures MOS-side carrier injection is developed. The model retains the simplicity of a 1-D solution to the ambipolar diffusion equation, but at the same time, captures the MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms. [ABSTRACT FROM AUTHOR]

A new gate-drive solution, cascade active voltage control (Cascade AVC), employs classic feedback-control methods with an inner loop controlling the insulated-gate bipolar-transistor (IGBT) gate voltage and an outer loop controlling the collector voltage, simultaneously. They make the switching performance less dependent on the IGBT itself. Feedback control of IGBTs in the active region does not necessarily slow the switching but introduces stability issues. A detailed stability analysis provides a sensible perspective to judge the system stability and justify the controller design, through considering major operating points and determining corresponding IGBT parameters. Experiments on high-power IGBTs including a 4500-V device show that Cascade AVC offers improved performance and is easier to design than the original AVC. [ABSTRACT FROM AUTHOR]

Although insulated-gate bipolar-transistor (IGBT) turn-on losses can be comparable to turn-off losses, IGBT turn-on has not been as thoroughly studied in the literature. In the present work IGBT turn on under resistive and inductive load conditions is studied in detail through experiments, finite element simulations, and circuit simulations using physics-based semiconductor models. Under resistive load conditions, it is critical to accurately model the conductivity-modulation phenomenon. Under clamped inductive load conditions at turn-on there is strong interaction between the IGBT and the freewheeling diode undergoing reverse recovery. Physics-based IGBT and diode models are used that have been proved accurate in the simulation of IGBT turn-off. [ABSTRACT FROM AUTHOR]

This paper presents a new technique for analyzing the conditions to which power semiconductor devices are subjected within practical inverters. A representative load cycle, which defines the inverter conditions, is used to estimate the switching conditions of the devices. Condition maps are generated, which allows the design and testing of the system to consider the more likely range of conditions. Estimates of temperature profiles can also be made to further improve the realism of such design. This promises to lead to the development of more realistic optimization procedures. [ABSTRACT FROM AUTHOR]

Feedback control of insulated gate bipolar transistors (IGBTs) in the active region can be used to regulate the device switching trajectory. This facilitates series connection of devices without the use of external snubber networks. Control must be achieved across the full active region of the IGBT and must balance a number of conflicting system goals including diode recovery. To date, the choice of control parameters has been a largely empirical process. This paper uses accurate device models and formalized optimization procedures to evaluate IGBT active voltage controllers. A detailed optimization for the control of IGBT turn-on is presented in this paper. [ABSTRACT FROM AUTHOR]

The operation of an insulated gate bipolar transistor (IGBT) in its active region is a well established technique for withstanding short circuits and also for dv/dt control. In this paper, we exploit the active behavior of the IGBT, applying a voltage feed- back Loop to the IGBT to control its switching. It is shown that adding a bias to the demand reference waveform shifts the IGBT into the active region and permits wide bandwidth operation over most of the switching transient. The operation of the IGBT is reported in detail, making reference to a selection of experimental waveforms for 400-A, 1700-V capsule IGBTs. The implementation required for control of such large IGBT modules and capsule devices for high power applications is described and discussed. It is concluded that the active voltage control method allows the operation of high power IGBT circuits to be closely defined. [ABSTRACT FROM AUTHOR]

Presents a study that examined circuit simulator models for the diode and insulated gate bipolar transistor (IGBT) with full temperature dependent features. Simulation of the distributed charge; Results of the study; Conclusion.

Presents a study which developed an electrothermal physics-based model for the field-stop insulated gate bipolar transistor. Characteristics of the model; Analytical description of the field-stop layer; Details of the experimental and simulation results.