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Your search keyword '"Crabbe, Emmanuel"' showing total 2 results
Start Over Author "Crabbe, Emmanuel" Topic semiconductors -- research
2 results on '"Crabbe, Emmanuel"'

1. Si/Si(1-x)Ge(x) valence band discontinuity measurements using a semiconductor-insulator-semiconductor (SIS) heterostructure

Author

Gan, Chock H., Alamo, Jesus A. del, Bennett, Brian R., Meyerson, Bernard S., Crabbe, Emmanuel F., Sodini, Charles G., and Reif, L. Rafael

Subjects
Semiconductors -- Research, Germanium -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

Use of a semiconductor-insulator-semiconductor (SIS) heterostructure to determine Si/Si(1-x)Ge(x) valence band discontinuity on (100) unstrained Si indicates that the bottom Si/Si(1-x)Ge(x) interface has a low valence band discontinuity when the Ge composition exceeds 10%. The application of a new data analysis method helps derive the valence band discontinuity values. An experimental evaluation of the discontinuity shows a value of 6.4x million electron volts for Ge compositions ranging between 0% and 17.5%.

Published
1994

2. SiGe-channel heterojunction p-MOSFET's

Author

Verdonckt-Vandebroek, Sophie, Crabbe, Emmanuel F., Meyerson, Bernard S., Harame, David L., Restle, Phillip J., Stork, Johannes M.C., and Johnson, Jeffrey B.

Subjects
Metal oxide semiconductor field effect transistors -- Design and construction, Semiconductors -- Research, Business, Electronics, Electronics and electrical industries
Abstract

A study of SiGe-channel heterojunction p-MOSFETs includes the selection of the transistor gate material, optimization of the silicon-germanium channel profile and the adjustment of threshold voltage gate-oxide thickness. The importance of optimization of the SiGe-channel profile and the advantages of SiGe-channel doped p-MOSFETs are discussed.

Published
1994

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