1. Galvanomagnetic Properties in Anisotropic Layered Films Based on Bismuth Chalcogenides.
- Author
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Usov, O. A., Lukyanova, L. N., and Volkov, M. P.
- Subjects
- *
TOPOLOGICAL insulators , *TUNNELING spectroscopy , *SURFACE states , *THERMOELECTRIC materials , *MAGNETIC fields , *SEMIMETALS , *BISMUTH - Abstract
In anisotropic layered films of a multicomponent n-Bi1.92In0.02Te2.85Se0.15 solid solution in strong magnetic fields from 2 to 14 T at low temperatures, quantum oscillations of the magnetoresistance associated with the surface states of electrons in three-dimensional topological insulators are studied. From analysis of the spectral distribution of the amplitudes of quantum magnetoresistance oscillations, the main parameters of the Dirac-fermion surface states are determined. The results are compared with data obtained by the method of scanning tunneling spectroscopy. It is shown that a high surface concentration determines the contribution of the Dirac-fermion surface states to the thermoelectric properties of n-Bi1.92In0.02Te2.85Se0.15 films. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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