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Growth of large-grain polycrystalline silicon has been demonstrated using silicide-mediated crystallization of amorphous silicon (a-Si) by a pulsed rapid thermal annealing (RTA). The Ni atoms in concentration of 4.6×1012/cm2 on the a-Si surface were heated at 700 °C in the RTA system for 10 s, ten times with 60 s intervals between the heat pulses. The Ni atoms on a-Si aggregate together, forming NiSi2 precipitates. The crystallization proceeds from the NiSi2 nuclei until the neighboring crystallites collide and forms distinct grain boundaries. It was found that 3.6×107 Ni atoms form a seed for metal induced crystallization and the grain size was 40 μm when the Ni density was 4.6×1012/cm2 on the a-Si. The grain size increases with decreasing metal density on a-Si. [Copyright &y& Elsevier]

Presents a study which focused on the fabrication of an off-state leakage thin-film transistor using a chlorine incorporated amorphous silicon stacked active layer. Experimental details; Results and discussion; Conclusions.

We have studied the fabrication of low off-state leakage current amorphous silicon thin-film transistor (TFT) using Cl incorporated amorphous silicon [a-Si:H(:Cl)] as an active layer. The room temperature conductivity and conductivity activation energy of a-Si:H(:Cl) deposited by adding 10% SiH2Cl2 into silane plasma are much less than those of undoped hydrogenated amorphous silicon because the a-Si:H(:Cl) shows a p-type conduction. The off-state leakage currents of the a-Si:H(:Cl) TFT under light illumination are much less than that of conventional a-Si:H TFT without degrading the field effect mobility because the photoconductivity of a-Si:H(:Cl) is much less than that of a-Si:H. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]