1. Polycrystalline silicon prepared by metal induced crystallization
- Author
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Choi, Jong Hyun, Kim, Do Young, Kim, Seung Soo, Park, Seong Jin, and Jang, Jin
- Subjects
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POLYCRYSTALLINE semiconductors , *SILICONES , *SURFACE energy - Abstract
Growth of large-grain polycrystalline silicon has been demonstrated using silicide-mediated crystallization of amorphous silicon (a-Si) by a pulsed rapid thermal annealing (RTA). The Ni atoms in concentration of 4.6×1012/cm2 on the a-Si surface were heated at 700 °C in the RTA system for 10 s, ten times with 60 s intervals between the heat pulses. The Ni atoms on a-Si aggregate together, forming NiSi2 precipitates. The crystallization proceeds from the NiSi2 nuclei until the neighboring crystallites collide and forms distinct grain boundaries. It was found that 3.6×107 Ni atoms form a seed for metal induced crystallization and the grain size was 40 μm when the Ni density was 4.6×1012/cm2 on the a-Si. The grain size increases with decreasing metal density on a-Si. [Copyright &y& Elsevier]
- Published
- 2003
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