1. Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate.
- Author
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Lei, Dian, Lee, Kwang Hong, Huang, Yi-Chiau, Wang, Wei, Masudy-Panah, Saeid, Yadav, Sachin, Kumar, Annie, Dong, Yuan, Kang, Yuye, Xu, Shengqiang, Wu, Ying, Tan, Chuan Seng, Gong, Xiao, and Yeo, Yee-Chia
- Subjects
FIELD-effect transistors ,GERMANIUM - Abstract
Germanium–tin (GeSn) p-channel fin field-effect transistor (p-FinFET) was realized on a novel GeSn-on-insulator (GeSnOI) substrate. The high-quality GeSnOI substrate was formed using direct wafer bonding technique and was layer-transferred from a 300-mm GeSn/Ge/Si donor wafer. Material quality was examined using atomic force microscopy, high-resolution transmission electron microscopy, Raman spectroscopy, and high-resolution X-ray diffraction. The fabricated GeSn p-FinFETs exhibit a small subthreshold swing (${S}$) of 79 mV/decade at ${V}_{\text {DS}}$ of −0.05 V (by a device with ${L}_{\text {CH}}$ of 200 nm and ${W}_{\text {Fin}}$ of 30 nm), good control of short channel effects, and high intrinsic transconductance (${G}_{m,\text {int}} = 702\,\,\mu \text {S}/\mu \text{m}$ at ${V}_{\text {DS}}$ of −0.5 V for ${L}_{\text {CH}}$ of 80 nm). Low-temperature mobility analysis was performed on the GeSn p-FinFETs. High effective hole mobility ($\mu _{\text {eff}}$) (210 cm2/ $\text {V}\cdot \text {s}$ at 290 K and 398 cm2/ $\text {V}\cdot \text {s}$ at 5 K) is achieved. The GeSn p-FinFETs presented in this paper exhibit the highest ${G}_{m,\text {int}}/{S}_{\text {sat}}$ at ${V}_{\text {DS}}$ of −0.5 V for all the reported GeSn p-FETs to date. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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