1. Effective Contact Resistivity Reduction for Mo/Pd/n-In0.53Ga0.47 as Contact.
- Author
-
Zhang, Jian, Horiguchi, Naoto, Mocuta, Dan, Collaert, Nadine, De Meyer, Kristin, Jiang, Yu-Long, Wang, Lin-Lin, Yu, Hao, Merckling, Clement, Mols, Yves, Vais, Abhitosh, Ramesh, Siva, Ivanov, Tsvetan, and Schaekers, Marc
- Subjects
OHMIC contacts ,INDIUM gallium arsenide ,FERMI level ,CONDUCTION bands ,PALLADIUM ,MOLYBDENUM - Abstract
We compare the contact characteristics for Mo, Pd, and Ti on n-InGaAs layer with a range of active donor concentration from $1.6 \times 10^{18}$ cm−3 to $4.8 \times 10^{19}$ cm−3. The Fermi level pinning of 0.18 eV lower than the bottom of n-InGaAs conduction band is experimentally manifested. It is also revealed that the contact resistivity ($\rho _{\text {c}}$) of Mo/n-InGaAs contact clearly outperforms after annealing. However, for the first time, we demonstrate that the Mo/Pd (2nm)/n-InGaAs contact can achieve a $\rho _{\text {c}}~35$ % and 20% lower than a single Mo/n-InGaAs contact after annealing at 400 °C and 450 °C for 1min, respectively. [ABSTRACT FROM AUTHOR]
- Published
- 2019
- Full Text
- View/download PDF