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Deep Level Transient Spectroscopy (DLTS) has been applied to Metal-Oxide-Semiconductor (MOS) capacitors fabricated on crystalline silicon n- and p-type substrates, with a SiO2 or a SiO2/SiNx passivation stack, covered by an Al gate. It is shown that similar interface state distributions are obtained in both cases, from which it is concluded that the SiNx deposition does not degrade the interface. It is also shown that a rather large density of dangling bond defects is present at the Si/SiO2 interface, which is related to the absence of a post metallization forming gas annealing. [ABSTRACT FROM AUTHOR]

An overview is given concerning industrial technologies, IMEC's advanced pilot line crystalline silicon solar cell technologies and medium term developments for industrial crystalline silicon terrestrial solar cell fabrication. Also IMEC's work on thin film crystalline silicon solar cells is shortly presented, all of this taking into account the existing market and technology trends. [ABSTRACT FROM AUTHOR]