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Your search keyword '"Silicon–Germanium alloys"' showing total 5 results
Start Over Descriptor "Silicon–Germanium alloys" Topic silicon
5 results on '"Silicon–Germanium alloys"'

1. The influence of magnetic processing on properties and phase composition of alloyed semiconductor silicon.

Author

Kutzova, V. Z., Nosko, O. A., and Sulay, A. M.

Subjects
*MAGNETICS, *SEMICONDUCTORS, *SILICON
Abstract

In the course of the research, we have noted the influence of weak constant magnetic field on the structure, phase composition, and properties of silicon, namely, significant increment of microhardness and considerable degradation of electrophysical properties, forming of polycrystalline structure in silicon specimens. The qualitative explanations of magneto-stimulated phenomena in studied specimens have been suggested. In the article the influence of alloying and magnetic processing (MP) at the structure and properties of Si specimens has been studied. [ABSTRACT FROM AUTHOR]

Published
2017

2. Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si1−xGex

Author

Ulyashin, A.G., Abrosimov, N.V., Bentzen, A., Suphellen, A., Sauar, E., and Svensson, B.G.

Subjects
*GERMANIUM compounds, *PHOTOCONDUCTIVITY, *SEMICONDUCTOR design, *MATERIALS science
Abstract

Abstract: In this work we have investigated the influence of the Ge composition on the minority carrier lifetime in Czochralski (Cz) grown monocrystalline Si1− x Ge x alloys in the composition range of 0

Published
2006
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3. Defect studies on silicon and silicon–germanium for PV and optoelectronic applications

Author

Pizzini, S., Acciarri, M., Binetti, S., LeDonne, A., Marchionna, S., and Bollani, M.

Subjects
*SILICON, *GERMANIUM alloys, *DISLOCATIONS in crystals, *CRYSTAL growth
Abstract

Abstract: Defect monitoring and engineering techniques were applied to multicrystalline silicon grown from electronic grade silicon scraps and strained silicon–germanium alloys to test their suitability for low-cost photovoltaics and high-speed electronics, respectively. The combination of lifetime, photoluminescence and electron beam induced current (EBIC) measurements was found a very effective practice for the analysis of the effect of impurities on the electrical activity of grain boundaries and dislocations in multicrystalline silicon. Room temperature photoluminescence has been also used to monitor the effect of various cell fabrication process steps on the local recombination activity of defects. The application of the EBIC technique was found as well a good tool for a quantitative determination of threading dislocation density in Si–Ge alloys, in view of the optimisation of the low energy plasma-enhanced chemical vapour deposition (LEPECVD) used for their growth. [Copyright &y& Elsevier]

Published
2006
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4. Determination of the trap state density differences in hydrogenated microcrystalline silicon–germanium (Si:Ge:H) alloys

Author

Boshta, M., Bärner, K., Braunstein, R., Alavi, B., and Dalal, V.

Subjects
*GERMANIUM, *SILICON, *NONMETALS, *ALLOYS
Abstract

Time resolved photo-and thermoelectric effects (TTE) can be used to simultaneously determine, trap levels and trap state density differences in microcrystalline (μc-SiGe:H) samples. Here, in particular, the trap state density differences are obtained from the decay of the ambipolar charge distribution, i.e. stage II of the TTE transients. This type of spectroscopy has been applied for the first time to μc-SiGe:H samples and indeed trap states which seem to relate to concentration fluctuations, i.e. Si(Ge) and Ge(Si) clusters are observed. [Copyright &y& Elsevier]

Published
2004
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5. Quantification of strain through linear dichroism in the Si 1s edge X-ray absorption spectra of strained Si1−xGex thin films

Author

Stephen G. Urquhart, Mercedes Martinson, Adam P. Hitchcock, J.-M. Baribeau, Mitra Masnadi, Yongfeng Hu, Shaylin Eger, Wei Cao, Q.-F. Xiao, and Joseph C. Woicik

Subjects
Germanium alloys, Silicon, Materials science, Absorption spectroscopy, Dichroism, Thin films, X-ray spectromicroscopy, Analytical chemistry, Angle dependence, General Physics and Astronomy, Strained-Si, 02 engineering and technology, Linear dichroism, Total electron yield, 01 natural sciences, Compressive strain, Strain, NEXAFS, symbols.namesake, Silicon-germanium alloys, 0103 physical sciences, Epitaxial growth, 010306 general physics, Spectroscopy, Angle-dependent, X-ray absorption spectroscopy, X-ray spectroscopy, High spatial resolution, Germanium, Strain metrology, Absorption spectra, X-ray absorption spectrum, Surfaces and Interfaces, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, XANES, Si(1 0 0), Surfaces, Coatings and Films, Strain-dependent, Raman spectroscopy, X ray absorption spectroscopy, symbols, 0210 nano-technology
Abstract

We have quantitatively measured the angle dependence in the Silicon 1s X-ray absorption spectra of strained Si1−xGex thin films prepared by epitaxial growth on Si(1 0 0) substrates, through surface sensitive total electron yield detection. The linear dichroism difference extracted from these angle dependent X-ray absorption spectra is proportional to the degree of strain, as measured separately by Raman spectroscopy. This quantitative relationship provides a means to measure the compressive strain in Si1−xGex thin films. This strain-dependent X-ray absorption spectroscopy has the potential to realize a semiconductor strain metrology through high spatial resolution X-ray spectromicroscopy.

Published
2013
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