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Focuses on a study with which analyzed the annealing-induced variations in compositions, microstructure, resistivity and internal stresses of amorphous molybdenum/silicon. Specimen preparation; Composition and architecture of the molybdenum silicate layers; Crystalline phase formation.

We present the data on specific suicide-to-silicon con- tact resistance (ρc) obtained using optimized transmission-line model structures, processed for a broad range of various n- and p-type Si doping levels, with NiSi and PtSi as the suicides. These structures, despite being attractive candidates for embedding in the CMOS processes, have not been used for NiSi, which is the material of choice in modem technologies. In addition, no data-base for NiSi-silicon contact resistance exists, particularly for a broad range of doping levels. This letter provides such a database, using PtSi extensively studied earlier as a reference. [ABSTRACT FROM AUTHOR]

The use of aluminum as an electrode in metal-insulator-semiconductor devices containing lanthanum oxide is impaired by unacceptable leakage current levels. Time of flight secondary ion mass spectroscopy depth profiling shows a significant amount of silicon out-diffusion from the substrate and aluminum in-diffusion towards the oxide. By using titanium nitride as the electrode, the silicon out-diffusion is suppressed, which improves the device performance. This indicates that, despite the larger coordination number of the lanthanum ions in the oxide, aluminum acts as a sink for silicon, thus driving the out-diffusion of silicon. [ABSTRACT FROM AUTHOR]