1. Study on cut-off characteristics of sub-nanosecond silicon carbide PiN switch.
- Author
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Wu, Zhaoyang, Lu, Wei, Bao, Xiangyang, Meng, Fanbao, Yang, Zhoubing, Sun, Qian, Zhao, Fangzhou, and Wang, Yutian
- Subjects
CARRIER density ,ELECTRIC fields ,SILICON carbide ,SYSTEMS design ,DOPING agents (Chemistry) ,ELECTRIC capacity - Abstract
In this paper, a simulation model of p type PiN high voltage pulse open switch is established. The switch operates in "punch through" mode, with a 4 kA/cm
2 cut-off current density and sub-nanosecond cut-off speed. The cut-off process of switch can be divided into three stages, that is, non-equilibrium carriers extraction stage, majority carriers drift stage and charging stage of junction capacitance by change of internal electric field and carrier concentration. Keeping injection current and cut-off current as 20 A and 40 A, the switch cut-off speed and "pedestal" voltage are reciprocally determined. Thus, optimizing the doping concentration and thickness of p layer is a valid solution for the actual system design. [ABSTRACT FROM AUTHOR]- Published
- 2021
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