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Experimental-modeling investigation of the transient thermal crosstalk between the field-effect transistors implemented on a silicon-on-insulator substrate is reported. The measurements were performed using a high-speed electrical pulse—probe sampling technique, which allowed detection of thermally modulated subthreshold currents. The technique achieved a temperature resolution of ∼50 mK, a time resolution of 5 ns, and a temperature sensitivity of ∼0.6 μA/K. The finite-element method was used to solve the heat diffusion equation and to obtain the temperature profiles for the given device structures. The combined high-resolution experimental—simulation approach allowed the study of the thermal crosstalk between two adjacent devices and probe the local temperature at different locations of the structure. The effects of the interface quality, layer thickness, material selection, and interdevice spacing on the heat diffusion and device performance were investigated in detail. [ABSTRACT FROM AUTHOR]

This paper describes a technique for modeling single-event upsets due to ionizing radiation in a partially depleted silicon-on-insulator (SOI) MOSFET device. Two current pulses are used, one connected between the drain and body of the device, and the other connected between the body and source of the device. The physical representation of these two current sources is described in detail. Circuit modeling is verified against drift-diffusion field solver modeling and hardware experiments. The effects of manufacturing variation and operating condition variation on the qCrit of circuit storage elements are explored. [ABSTRACT FROM AUTHOR]