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A novel phosphate glass of the P 2 O 5 -SnCl 2 -Fe 2 O 3 system was synthesized using the melt-cooling technique. The effect of substituting SnO for SnCl 2 on the properties of the glass was systematically explored. The material was analyzed using X-ray diffraction (XRD), differential scanning calorimetry (DSC), Fourier-transform infrared spectroscopy (FTIR), and a thermal expansion test. The thermal expansion coefficient (TEC) analysis revealed that the glass transition temperature initially rises and subsequently falls with increasing SnO content. The incorporation of Sn and Fe ions not only reduces the characteristic temperature of the glass but also enhances its chemical stability, presenting significant potential for applications in low-temperature sealing technologies. [ABSTRACT FROM AUTHOR]

Abstract Using ultraviolet (UV) annealing through wide energy bandgap HfO2/SiO2 gate dielectric, nanosheet SnO pFET achieved hole effective mobility (µeff) from 55 cm2/V-s at low hole density (Qh) to 13.38 cm2/V-s at 5 × 1012 cm-2 Qh, compared to that of 9.03 cm2/V-s at 5 × 1012 cm-2 Qh for SnO device without UV annealing. This is the highest µeff among oxide semiconductor pFETs at high Qh, which is required to realize low-power high-density monolithic 3D CMOS logic. This requires excellent surface roughness, good uniformity and free-from grain boundaries that is beyond the thermally-annealed poly-Si. Excellent on-current/off-current (ION/IOFF) value of 1.05 × 105 were measured simultaneously in the UV-annealed SnO pFET, which is due to the ultra-thin 8 nm thick SnO nanosheet channel to pinch off the channel leakage. From X-ray photoelectron spectroscopy (XPS) analysis, the 48% µeff improvement by UV irradiation is due to increased Sn2+ and decreased Sn0. Such high µeff at high Qh, large ION/IOFF, smooth surface, good uniformity and low thermal budget process are the enabling technologies for monolithic 3D CMOS.

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An exquisite, engineering of two poor hole transporting materials (HTMs, SnO, and PDTON) to form an excellent double‐layered HTL (SnO/PDTON) for inverted tin‐perovskite solar modules (TPSMs) is developed. SnO/PDTON has better photovoltaic performance than the commonly used PEDOT:PSS HTM when large‐area TPSMs are fabricated. Thermally evaporated SnO (that is a simple, available oxide with high hole mobility, good transparency, and adjustable frontier orbitals energy levels) film is used as a main hole transporting layer (HTL). Amphiphilic polymer PDTON (having the amine and ether groups on the side chains) film is used as a Co‐HTL, cross‐linker, passivator, and interface modification agent, as unveiled various physicochemical studies. Double‐layered SnO/PDTON with a flat morphology and good affinity toward perovskite precursor solution creates also a proper surface for depositing large‐area, high‐quality TPsk film. Therefore, TPSM (25.2 cm2 active area on 10 cm × 10 cm ITO substrate) based on double‐layered SnO/PDTON HTL achieving an efficiency over 10% with a negligible current hysteresis is reported for the first time. This study emphasizes not only the exquisite design of combining the specific characteristics of two prosaic HTMs to become a good double‐layered HTL but also gives a direction toward fabricating TPSMs to be applied in all‐perovskite tandem solar module. [ABSTRACT FROM AUTHOR]

This study unveils a superior method for energy storage synthesis, employing CdO, SnO, and CdO0·2/SnO0.2 hetero-junction electrodes through enhanced solid-state reaction. The CdO and SnO electrodes with a specific capacitance of 266.66, 191.66, 166.66 ​F/g and 138.88, 122.22, and 115.07 ​F/g. The CdO0·2/SnO0.2 hetero-junction nanoparticles with a specific capacitance of 370.37, 222.22, 158.73 ​F/g. The charge storage capacity of CdO0·2/SnO0.2 hetero-junction nanoparticle electrodes is outstanding, making them highly beneficial for energy storage and supercapacitor applications. The XRD patterns obtained from the synthesized CdO0·2/SnO0.2 hetero-junction nanoparticles exhibit distinct diffraction peaks, showing a cubic crystal structure. These diffraction peaks, at 2θ values of 27.111°, 34.189°, 38.682°, 52.635°, 55.793o, 62.779o, 66.676o, and 79.496° can be attributed to the (111), (200), (211), (212), (220), (300), (22), and (311) diffraction planes of CdO0·2/SnO0.2 hetero-junction nanoparticles. The observation of a grain-like shape in the CdO0·2/SnO0.2 hetero-junction nanoparticles structure is attributed to CdO, which serves as a confirmation of the formation of a hetero-junction. The energy bandgap of CdO, SnO, and CdO0·2/SnO0.2 hetero-junction nanoparticles material are 2.50, 3.50, and 3.35 ​eV respectively.

We report growth and characterization of n-Si/p-SnOx heterojunction using RF sputtering for deposition of p-type SnOx under controlled growth oxygen pressure over n-type silicon (Si) wafer. The heterojunction properties of Si/SnOx were varied by controlling the growth oxygen pressure of SnOx. Several characterization techniques, including PL (photoluminescence), AFM (atomic force microscopy), FESEM (field emission scanning electron microscopy), XRD, I-V characteristics and Hall measurement, were conducted to analyze the structural, optical, and electrical properties of the n-Si/p-SnOx heterojunction. The knee voltage (Vknee), or cut-in voltage, was calculated by analyzing the gradient of the dark current-voltage (J-V) curves when the bias was applied in the forward direction. The Vknee values for type-I, type-II, and type-III n-Si/p-SnOx heterojunctions were determined to be 0.62 V, 0.84 V, and 1.0 V, respectively. The ideality factors (n1 and n2) were determined to be 1.52, 2.22, 3.52, and 8.41, 9.31, 10.34, respectively, for various heterojunction types. The reverse saturation current densities, J01 and J02 ranging from approximately 10−7 to 10−6 A/cm2, and 10−5 to 10−4 A/cm2, respectively. The objective of this experimental work is to investigate especially, the prospect of silicon /metal-oxide (Si/SnOx) based heterojunction to be used as optical sensors with tunable optoelectronic properties of SnOx.

IntroductionMeningioma is the most common primary intracranial tumour in adults. The majority are non-malignant, but a proportion behave more aggressively. Incidental/minimally symptomatic meningioma are often managed by serial imaging. Symptomatic meningioma, those that threaten neurovascular structures, or demonstrate radiological growth, are usually resected as first-line management strategy. For patients in poor clinical condition, or with inoperable, residual or recurrent disease, radiotherapy is often used as primary or adjuvant treatment. Effective pharmacotherapy treatments do not currently exist. There is heterogeneity in the outcomes measured and reported in meningioma clinical studies. Two 'Core Outcome Sets' (COS) will be developed: (COSMIC: Intervention) for use in meningioma clinical effectiveness trials and (COSMIC: Observation) for use in clinical studies of incidental/untreated meningioma.Methods and analysisTwo systematic literature reviews and trial registry searches will identify outcomes measured and reported in published and ongoing (1) meningioma clinical effectiveness trials, and (2) clinical studies of incidental/untreated meningioma. Outcomes include those that are clinician reported, patient reported, caregiver reported and based on objective tests (eg, neurocognitive tests), as well as measures of progression and survival. Outcomes will be deduplicated and categorised to generate two long lists. The two long lists will be prioritised through two, two-round, international, modified eDelphi surveys including patients with meningioma, healthcare professionals, researchers and those in caring/supporting roles. The two final COS will be ratified through two 1-day online consensus meetings, with representation from all stakeholder groups.Ethics and disseminationInstitutional review board (University of Liverpool) approval was obtained for the conduct of this study. Participant eConsent will be obtained prior to participation in the eDelphi surveys and consensus meetings. The two systematic literature reviews and two final COS will be published and freely available.Trial registration numberCOMET study ID 1508.

Metal oxide semiconductors (MOSs) are considered as potential candidates for the low‐cost, large‐area fabrication of flexible optoelectronic devices. However, the current optoelectronic devices based on MOSs are limited to unidirectional photoresponse, which constrains the performance of MOSs‐based vision sensors for artificial vision systems. Herein, for the first time, a flexible artificial vision system integrated with optical perception, computation, and learning functionalities is demonstrated using SnO optoelectronic synaptic transistor‐based event‐driven vision sensors to enable dynamic image perception, noise reduction, detection, and recognition. Specifically, an ambipolar SnO transistor is demonstrated by introducing HfO2 passivation layer, which facilitates the movement of O atoms around Sn‐vacancy sites to the HfO2 layer to achieve the transformation from p‐type to ambipolar transport behaviors. More importantly, the HfO2‐passivated SnO transistors exhibit gate‐tunable bidirectional photoresponse behavior, which is essential to simulate the neurobiological functionalities of bipolar cells. This way, the multilayer neural network learning circuit built from SnO transistors achieves fast recognition at a 16% Gaussian noise level and high recognition accuracy up to 95.2% for pattern letters. Under the bending states, recognition accuracies are still retained at 91.2%. These properties are well retained even under the influence of 100% offset of the synaptic programming value. [ABSTRACT FROM AUTHOR]

The study investigates the mitigation of radiation damage on p‐type SnO thin‐film transistors (TFTs) with a fast, room‐temperature annealing process. Atomic layer deposition is utilized to fabricate bottom‐gate TFTs of high‐quality p‐type SnO layers. After 2.8 MeV Au4+ irradiation at a fluence level of 5.2 × 1012 ions cm−2, the output drain current and on/off current ratio (Ion/Ioff) decrease by more than one order of magnitude, field‐effect mobility (μFE) reduces more than four times, and subthreshold swing (SS) increases more than four times along with a negative shift in threshold voltage. The observed degradation is attributed to increased surface roughness and defect density, as confirmed by scanning electron microscopy (SEM), high‐resolution micro‐Raman, and transmission electron microscopy (TEM) with geometric phase analysis (GPA). A technique is demonstrated to recover the device performance at room temperature and in less than a minute, using the electron wind force (EWF) obtained from low‐duty‐cycle high‐density pulsed current. At a pulsed current density of 4.0 × 105 A cm−2, approximately four times increase in Ion/Ioff is observed, 41% increase in μFE, and 20% decrease in the SS of the irradiated TFTs, suggesting effectiveness of the new annealing technique. [ABSTRACT FROM AUTHOR]

Experimental investigation of Tin Oxide (SnO) film has been performed to analyse the effect of oxygen ratio variation on its optical and electrical properties. The oxygen composition in SnO film has been varied and correspondingly its extinction coefficient and band gap have been obtained. Also, density functional theory (DFT) study of SnO film has been carried out in order to obtain its optical properties such as extinction coefficient and corresponding bandgap. The experimental and theoretical trends related to its optical properties are in good agreement with each other. The SnO film may be used as a prospective light absorber layer in various opto-electronic sensor devices, solar cell in particular, and its optoelectronic properties can be tuned with change in oxygen mole fraction ratio of SnO films which are detailed out in this paper. Further, some important electrical parameters of such as Hall mobility, carrier concentration and resistivity of SnO films for its different Sn and O ratios have been obtained. The investigation of tunable optical and electrical properties of SnO thin film will pave the way for a wide range of opto-electronic devices.

Transparent conducting oxide (TCO) thin film is extensively used as electrode in solar cell and display, owing to its high transparency and excellent conductivity. Multicomponent oxides such as Zn–Sn–O (ZTO) have attracted much attention as a result. Although there is no expensive elements in ZTO, fabrication and investigating ZTO having different ratios of Zn/Sn is costly and time consuming. In this work, we have applied the concept of combinatorial methodology to deposit alternating ZnO and SnO wedges, with the two slanted surfaces in contact, to form a thin film having uniform thickness. The ZTO thin film thus prepared has unifrom compositional spread across the film. The crystalline structure and physical property of ZTO thin film are studied. [ABSTRACT FROM AUTHOR]

The electronic structure and magnetic properties of SnO monolayer doped with metal atoms (Cu or Zn) are investigated using first-principles calculations. Firstly, it is easier to form the substitution doping under oxygen-rich conditions, the formation energy of Zn-dopant is lower than that of Cu-dopant. Doping Zn atom gives rise to no magnetism. However, the magnetism is caused by Cu doping with magnetic moment of 1 µB, mainly due to the hybridization of Cu-3d and O-2p orbitals from the perspective of electronic structure. Researches on magnetic coupling of Cu atoms at different distances indicate the Cu-Cu are coupled mainly antiferromagnetically while it is ferromagnetic at the distance of 7.592 Å. Moreover, the magnetic moment of the Cu-doped SnO monolayer remains 1 µB, subjected to biaxial symmetric strains. The magnetic moments are also produced by Cu and O atoms. The Zn-doped SnO monolayer is inert, and the magnetism is still absent when strain is applied. [ABSTRACT FROM AUTHOR]

Abstract Ambipolar transistor operation in SnO thin‐film transistors (TFTs) is a promising character for future practical application, such as in integrated logic devices based on oxide semiconductors, because of its ability to develop them using a single material. However, there are only a few reports that demonstrate the apparent ambipolar operation for SnO TFTs owing to the insufficient knowledge on the reasons for deterioration of device performance. Although a previous study controls the operation mode of SnO TFTs [A. W. Lee et al. Adv. Electron. Mater. 6, 200742 (2020)], an additional passivating layer is required; however, it hinders the benefits of SnO usage. In this study, we provide the mechanism of deterioration of the ambipolar character of bare SnO TFTs, that is, the origin of defect states near the valence band maximum (near‐VB defect). Comprehensive spectroscopic approaches including photoemission, X‐ray emission, and X‐ray absorption spectroscopy, reveal that near‐VB defect states originate from oxygen vacancies, existing at the surface, and also in the entire SnO film. This finding is useful to improve device performance for obtaining the ambipolar operation of SnO TFTs.

Two-dimensional tin (II) monoxide (SnO) has shown great potential for future electronics, optoelectronics and thin film transistor devices. Using first-principles calculations, we investigated the structural, electronic, and magnetic properties of the Mn-doped SnO monolayer. The structural stability of the materials was examined which pointed to the feasibility of Mn substitutional doping in pure SnO monolayer. The doping-induced spin polarization revealed magnetic behavior which is due to the interaction between the dopants and the surrounding Sn and O atoms. The results show that the spin-split defect states are produced in the bandgap and a magnetic moment of 4.85 µB is observed. Along with the standard GGA approach, Hubbard U correction is also adopted to calculate the electronic and magnetic properties of the doped material, which unveiled the opening of the bandgap and an increase in the magnetic moment. The magnetic behavior of the dopant is discussed in the context of crystal field splitting in the square planner geometry of the host. The magnetic coupling between magnetic moments caused by two Mn atoms in the SnO monolayer is ferromagnetic, which is due to the p–d exchange interactions. It is found that Mn-doped monolayer SnO turns out to be a promising candidate for realizing a p-type diluted-magnetic-semiconducting metal oxide. [ABSTRACT FROM AUTHOR]

The major challenge of PV cell design and installation has always been to find the optimum cost per energy and area of installation of solar panels. In densely populated and high-yielding agricultural country like India land acquisition is becoming an issue. Moreover the consisting demand to deduce the cost per energy indulges the worldwide scientists to design more efficient solar cells with low production cost. In developing countries scientists and engineers are trying to find an amicable solution to meet up these problems. In this paper the mathematical modelling of a dual SIS bifacial vertically mounted solar panel has been proposed to mitigate the energy and land area crisis in countries of Indian subcontinent, south Asia and elsewhere. The SIS (Semiconductor-Insulator-Semiconductor) technology was chosen for its extremely low thermal budget and less complicated production procedure. A bifacial solar cell with SIS junction in both sides was modelled. The front surface SIS junction was considered ZnO-SiO2-Si(p-type) while the back surface junction was considered Si(p type)-Al2O3-SnO. The efficiency for front and back surface was calculated as 5.64% and 5.58% respectively. We have further considered the effect of albedo from two different surfaces (soil and concrete) and the efficiencies of front and back surface for these albedo radiations. The angle of installation was optimized for both these effects. Considering both direct and albedo the all-day efficiency was calculated as 22.47% for a sunny day tropical region. [ABSTRACT FROM AUTHOR]

The SnO2-based family is a traditional but important gas-sensitive material. However, the requirement for high working temperature limits its practical application. Much work has been done to explore ways to improve its gas-sensing performance at room temperature (RT). For this report, SnO2, SnO, and SnO/SnO2 heterojunction was successfully synthesized by a facile hydrothermal combined with subsequent calcination. Pure SnO2 requires a high operating temperature (145 °C), while SnO/SnO2 heterojunction exhibits an excellent performance for sensing NO2 at RT. Moreover, SnO/SnO2 exhibits a fast response, of 32 s, to 50 ppm NO2 at RT (27 °C), which is much faster than that of SnO (139 s). The superior sensing properties of SnO/SnO2 heterojunction are attributed to the unique hierarchical structures, large number of adsorption sites, and enhanced electron transport. Our results show that SnO/SnO2 heterojunction can be used as a promising high-performance NO2 sensitive material at RT. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) SnO is a p-type semiconductor that has received research and industrial attention for device-grade applications due to its bipolar conductivity and transparent semiconductor nature. The first-principles investigations based on the generalized gradient approximation (GGA) level of theory often failed to accurately model its structure due to interlayer Van der Waals interactions. This study is carried out to calculate structural and electronic properties of bulk and layered structures of SnO using dispersion correction scheme DFT+D3 with GGA-PBE to deal with the interactions which revealed good agreement of the results with reported data. The material in three-dimensional bulk happened to be an indirect gap semiconductor with a band gap of 0.6 eV which is increased to 2.85 eV for a two-dimensional monolayer structure. The detailed analysis of the properties demonstrated that the SnO monolayer is a promising candidate for future optoelectronics and spintronics devices, especially thin film transistors. [ABSTRACT FROM AUTHOR]

In this work poly(3,4 ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with ethylene glycol (EG) and SnO or SnO2 nanoparticles are mixed in a controlled way to create hybrid composites in form of thin films via spin coating. The potential applicability of these composites as gas sensors and as thermoelectric materials is tested, while insights are achieved in the comprehension of the underlying physical mechanisms. The addition of SnO in the composite promotes an enhancement in the chemoresistive response upon ethanol gas exposure at room temperature. Based on the Seebeck coefficient and Hall effect measurements, improvement of the power factor (PF) is achieved by the controlled addition of SnO nanoparticles in the composite. These results promise well for progress in the use of hybrid composites in these areas paving the way for future improvement in research on hybrid electronics, involving improved scalability and energy saving. [ABSTRACT FROM AUTHOR]

[Display omitted] • Effects of H doping on the phase structure and optoelectronic properties of SnO. • H doping facilitates the formation of metallic Sn phase in SnO films by sputtering. • H doping suppresses formation of secondary oxide phases (e.g.,SnO 2 , Sn 3 O 4) in SnO. • Effects of post thermal annealing on SnO films are also investigated. • Formation of Sn vacancies related defects gives rise to p-type conductivity in SnO. Hydrogen (H) is a ubiquitous impurity, which can significantly affect the phase structure and the optoelectronic properties of oxide semiconductors. To date, a well-established understanding of the effects of H doping on the properties of p-type transparent SnO is still lacking. Here, we present a comparative study to reveal the role of H in SnO films by magnetron sputtering. We find that in as-grown undoped SnO films, in addition to the tetragonal SnO phase, secondary phases of SnO 2 or Sn 3 O 4 are present under certain growth temperatures. In contrast, a small fraction of metallic Sn phase is included in the as-grown H-doped SnO (SnO:H) films, attributed to the partial reduction of SnO by the H 2 in the sputtering gas. Effects of post thermal annealing (PTA) on the properties of SnO films are also explored. Results strongly indicate that H doping or PTA facilitates the formation of Sn phase and Sn vacancies related defects, giving rise to the p-type conductivity observed in the undoped or H-doped SnO films. The present study provides a comprehensive understanding of the evolution of phase structures as well as defect properties of SnO films, which is crucial for their future studies and optoelectronic applications. [ABSTRACT FROM AUTHOR]

Ambipolar transistor operation in SnO thin‐film transistors (TFTs) is a promising character for future practical application, such as in integrated logic devices based on oxide semiconductors, because of its ability to develop them using a single material. However, there are only a few reports that demonstrate the apparent ambipolar operation for SnO TFTs owing to the insufficient knowledge on the reasons for deterioration of device performance. Although a previous study controls the operation mode of SnO TFTs [A. W. Lee et al. Adv. Electron. Mater. 6, 200742 (2020)], an additional passivating layer is required; however, it hinders the benefits of SnO usage. In this study, we provide the mechanism of deterioration of the ambipolar character of bare SnO TFTs, that is, the origin of defect states near the valence band maximum (near‐VB defect). Comprehensive spectroscopic approaches including photoemission, X‐ray emission, and X‐ray absorption spectroscopy, reveal that near‐VB defect states originate from oxygen vacancies, existing at the surface, and also in the entire SnO film. This finding is useful to improve device performance for obtaining the ambipolar operation of SnO TFTs. [ABSTRACT FROM AUTHOR]

Recently, p-type tin monoxide (SnO) thin-film transistors (TFTs) have gained interest for all-oxide complementary metal–oxide semiconductor (CMOS) circuits for flexible electronics and back-end-of-line integration with Si. However, most SnO TFTs demonstrated so far exhibit a low on– off-current ratio and limited field effect mobility. To understand and improve SnO TFT performance, it is necessary to quantitatively characterize the subbandgap defects in SnO and at its dielectric interface. In this work, we establish numerical models which provide this understanding. By concurrent fitting of simulated ${I}_{\text{D}}$ – ${V}_{\text{GS}}$ and effective mobility versus ${V}_{\text{GS}}$ to experimentally measured data, we can accurately extract SnO defect state profiles. Using the extracted simulation models, we then identify ways to improve SnO TFT performance. Specifically, a reduction in the density of shallow, bulk Gaussian acceptor states, is necessary to reduce the off-current, while reducing the contact resistance and interface donor-like tail state density can improve the SnO field effect mobility. [ABSTRACT FROM AUTHOR]

For the last few decades scientists across the world have achieved significant improvement in performance of conventional silicon p-n junction solar cell. Sophisticated high temperature doping technology is unavoidable in the fabrication of these conventional solar cells. Back in 1970s scientists proposed an alternative solar cell technology with Schottky barrier which can cut down the burden on thermal budget of manufacturing process. Later the metal-semiconductor Schottky barrier further modified with hetero junction semiconductor-semiconductor solar cells. A thin intrinsic layer sandwiched between semiconductor-semiconductor junctions can repair the junction defect efficiently. These SIS solar cells became popular for its low thermal budget and considerable efficiency. In this paper we have tried to propose a mathematical model of a novel dual side SIS solar cell which is basically a multi junction solar cell. We have introduced a third semiconductor layer (SnO) at the back side of the cell which can provide an inversion layer much similar to PERT solar cell. This structure is first of its kind and thus a theoretical analysis is required before implementation. We have studied the effect of this back field on the performance of the cell and propose a mathematical model based on reciprocity theorem of charge collection. The efficiency of conventional ZnO-pSi SIS solar cell was computed ~5.2% while the back SnO p+ layer is expected to enhance the efficiency up to ~7.9% according to our mathematical model. We have concluded with significant mathematical justification to implement this structure with proposed electro-chemical experiments. [ABSTRACT FROM AUTHOR]

Stannous oxide (SnO) is prepared by a sol–gel reaction, and the intermediate product is a white gel material, Sn6O4(OH)4, which is decomposed by a constant temperature heat treatment to form a regular black crystal, and the size reach 300 μm approximately. TG-DSC analysis shows that under air atmospheric conditions, SnO undergoes an oxidation and thermal decomposition reactions at 350 °C, which to form SnO2, Sn, and Sn3O4. With the temperature increasing, the reaction will continue and the final product will be SnO2. X-ray photoelectron spectroscopy (XPS) analysis shows that SnO is sensitive to oxygen. It is placed in air for about 2 months, and 81.8% of the crystal surface is oxidized to SnO2, but the inside of the crystal remains as SnO. Few layer crystal sheets was prepared by mechanical exfoliation with a thickness of 85 nm and a surface roughness of 1.02 nm, which provides a possibility for the application of few layers of SnO crystals to transparent and flexible electronic devices. [ABSTRACT FROM AUTHOR]

Three types of SnO/SnO2 nanocomposites with different component ratios were synthesized using a simple hydrothermal process. Three samples, S1, S2, and S3, were produced by optimizing the occupied volume inside the Teflon flask, and are referred to as SnO2 rich, intermediate level, and SnO rich, respectively. In terms of degradation of malachite green under visible light, the photocatalytic activity of the S2 sample outperforms the other two samples and pure SnO by 30 %. It is attributed to the fact that the S2 sample has the most heterojunction between p‐type SnO and n‐type SnO2 of the three samples because the formation of p‐type SnO and n‐type SnO2 heterojunction in S2 prevents photogenerated electron‐hole recombination. By comparing S1 and S3 samples, we figured out that Sn2+ doped into the SnO2 lattice acts as an electron trap, slowing the recombination process and increasing photocatalytic activity. [ABSTRACT FROM AUTHOR]

All available thermodynamic properties and phase diagram data of the Sn-O system at 1 atm total pressure were critically evaluated and optimized to obtain a set of thermodynamic functions of all stable phases. The discrepancies among available experimental phase diagram data were resolved. In addition, new experiments were attempted to determine the melting temperature of SnO 2 using sealed Pt capsules. It was confirmed that the melting temperature of SnO 2 is higher than 1700 °C, which was taken into account in the present optimization. The Gibbs energies of the liquid solution of SnO-SnO 2 and all solid compounds were obtained. A new phase diagram at 1 atm total pressure was constructed from the optimized Gibbs energy functions of all phases. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) electrocatalyst plays an important role in hydrogen production via water splitting. In this work, the first-principles calculation was used to investigate the hydrogen evolution reaction (HER) performance of transition metal (TM) single atom catalysts (SACs) on 2D SnO nanosheets. Among the TM considered (TM = V, Cr, Mn, Fe, Co, Ni, Cu and Pt), V, Fe, Co, Ni, Cu and Pt can effectively improve the catalytic activity of SnO. More importantly, the low-cost Co can exhibit promising HER performance with the Gibbs free energy as low as ~0.015 eV, which is competitive with the precious catalyst Pt. The theoretical exchange current densities of Co SACs can reach ~10−16 A/site. The exciting HER activity is mainly facilitated through the d-d hybridization between the TM and Sn atoms on the SnO surface, which introduces new electron states near the Fermi level. Our work highlights the complexity and diversity of the effect of TM SACs on SnO nanosheets and implies their potential applications as efficient HER electrocatalysts. • Transition metal SACs on SnO exhibit promising HER activity. • Co SACs on SnO can be competitive with the precious Pt. • The exchange current densities of Co SACs can reach ~10−16 A/site. • The HER activity is mainly facilitated via d-d hybridization of the TM and Sn. • The complexity and diversity of TM SACs on SnO nanosheets are found. [ABSTRACT FROM AUTHOR]

Electrocatalytic conversion of CO 2 to syngas is an attractive pathway for transforming CO 2 into high-value chemicals, but the process still suffers from low selectivity. In our work, we construct a two-dimensional (2D) structure of Cu 2 Se-SnO heterojunction catalyst through a high-temperature thermal reduction method. The catalyst with two phases located in the same plane exhibits efficient charge transfer, and the tunable heterojunction interface acts as active sites for CO 2 adsorption and activation. Additionally, its suitable *CO adsorption energy facilitates the desorption of intermediates, leading to the formation of CO. Finally, this catalyst demonstrates excellent selectivity for syngas, maintaining a Faradaic efficiency (FE) of over 60% across a wide range of potentials (-0.67 ∼ −1.07 V vs. RHE) with adjustable syngas ratios and up to 92% FE at −0.97 V vs. RHE. This research provides a new approach for balancing reduction CO 2 and competing hydrogen evolution reaction. [Display omitted] • Cu 2 Se-SnO nanosheet heterojunction with two phases locates in the same plane. • The tunable heterojunction interface acts as active sites for CO 2 reduction. • The in-plane heterojunction can avoid the shielding of the interface. • The introduction of SnO can decrease the adsorption strength of *CO on Cu 2 Se. • This catalyst demonstrates excellent selectivity for syngas with a FE over 60%. [ABSTRACT FROM AUTHOR]

Pyridoxal 5′-phosphate (the active form of vitamin B6) is a cofactor that is important for a broad number of biochemical reactions and is essential for all forms of life. Organisms that can synthesize pyridoxal 5′-phosphate use either the deoxyxylulose phosphate-dependent or -independent pathway, the latter is encoded by a two-component pyridoxal 5′-phosphate synthase. Saccharomyces cerevisiae contains three paralogs of the two-component SNZ/SNO pyridoxal 5′-phosphate synthase. Past work identified the biochemical activity of Snz1p, Sno1p and provided in vivo data that SNZ1 was involved in pyridoxal 5′-phosphate biosynthesis. Snz2p and Snz3p were considered redundant isozymes and no growth condition requiring their activity was reported. Genetic data herein showed that either SNZ2 or SNZ3 are required for efficient thiamine biosynthesis in Saccharomyces cerevisiae. Further, SNZ2 or SNZ3 alone could satisfy the cellular requirement for pyridoxal 5′-phosphate (and thiamine), while SNZ1 was sufficient for pyridoxal 5′-phosphate synthesis only if thiamine was provided. qRT-PCR analysis determined that SNZ2,3 are repressed ten-fold by the presence thiamine. In total, the data were consistent with a requirement for PLP in thiamine synthesis, perhaps in the Thi5p enzyme, that could only be satisfied by SNZ2 or SNZ3. Additional data showed that Snz3p is a pyridoxal 5′-phosphate synthase in vitro and is sufficient to satisfy the pyridoxal 5′-phosphate requirement in Salmonella enterica when the medium has excess ammonia.

Oxide semiconductor‐TFT technology is widely accepted as a technology that realizes next‐generation display and flexible device technologies. However, the absence of high‐performance p‐channel oxide‐TFT is still recognized as the largest technological barrier that hinders the potentials of the oxide‐TFT device application. Here we investigated the TFT characteristics of p‐channel SnO and Cu2O oxide‐TFTs and clarified the origin of the poor TFT characteristics. It was found that their TFT performances for both the devices are largely affected backchannel donor‐type defect. We also developed effective backchannel defect termination for p‐channel oxide‐TFTs to improve their p‐channel TFT characteristics. [ABSTRACT FROM AUTHOR]

In this study, SnO micro-square was prepared from the reaction between Tin(II) chloride and sodium hydroxide in 1:4 molar ratio under reflux condition without calcination. The characterisation of the product was carried out by Fourier-transform infrared, X-ray powder diffraction (XRD), scanning electron microscopy and energy-dispersive X-ray spectroscopy. XRD pattern showed the formation of α-SnO tetragonal lattice structure with orientation in (001), (101), (110), (002), (200), (112) and (103) planes at 18.39, 29.86, 33.30, 37.27, 47.91, 50.83 and 57.40° values. Then, the photoinduced decolourisation of Acid Orange 7 (AO7) and Acid Orange 10 (AO10) was studied using SnO. The effect of parameters such as pH, photocatalyst amount, initial dye concentration and contact time was studied. The final results showed that by the addition of SnO (0.04 g) to AO7 (5 ppm) at pH 5 and SnO (0.05 g) to AO10 (5 ppm) at pH 6, the highest decolourisation percentage 93.0% and 70.4% for AO7 and AO10 dyes can be achieved. The rate of photoinduced decolourisation of AO7 and AO10 in the presence of SnO was obeyed by the first-order kinetic models. [ABSTRACT FROM AUTHOR]

Wearable bio-sensing devices are considered promising for ubiquitous heath monitoring. To accurately read out small bio-signals, the development of high-performance flexible front-end circuits is crucial. Oxide semiconductors are considered one of the most promising active channel materials for on-polymeric-foil electronics. In this article, a high-gain flexible complementary metal–oxide–semiconductor (CMOS) inverter with a beta ratio of 1, a desirable feature for device miniaturization, was demonstrated by monolithically integrating a top-gated n-type indium gallium zinc oxide (IGZO) thin-film transistor (TFT) and a bottom-gated p-type SnO TFT on a 5.5-μm-thick polyimide substrate. The influence of atomic layer deposited (ALD)-HfO2 capping layer on the properties of oxide active channels has been analyzed. The flexible inverter exhibited a high static voltage gain of 370 V/V and balanced noise margins (noise margin high of 4.8 V, noise margin low of 4.7 V) for a supply voltage of 10 V. In addition, the voltage transfer characteristics remained virtually unchanged when the device was subjected to an outward or an inward bending radius of 2.5 mm, indicating the complementary oxide-TFT-based inverter is practical for flexible electronics applications. [ABSTRACT FROM AUTHOR]

S-nitrosation of cysteine thiols (SNOs), commonly referred to as S-nitrosylation, is a cysteine oxoform that plays an important role in cellular signaling and impacts protein function and stability. Direct labeling of SNOs in cells with the flexibility to perform a wide range of cellular and biochemical assays remains a bottleneck as all SNO-targeted probes to date employ a single analytical modality such as biotin or a specific fluorophore. We therefore developed a clickable, alkyne-containing SNO probe ‘PBZyn’ based on the o-phosphino-benzoyl group warhead that enables multi-modal analysis via click conjugation. We demonstrate the utility of PBZyn to assay SNOs using in situ cellular imaging, protein blotting and affinity purification, as well as mass spectrometry. The flexible PBZyn probe will greatly facilitate investigation into the regulation of SNOs.

In this work, the adsorption of Ce3+ by Sn(OH)2, SnO, and Sn(OH)4 was investigated. By comparing the mass of cerium oxalate caused by the adsorbed Ce3+, Sn(OH)2 and Sn(OH)4 have the ability to adsorb Ce3+, while Sn(OH)4 has a stronger adsorption capacity of Ce3+. However, SnO does not have the ability. The possible mechanism of Sn(OH)X adsorption Ce3+ was further discussed. And the result indicates that the hydroxide can adsorb cations by means of anionic groups on its surface in the solution so that the cations can be enriched on the hydroxide surface. The paper provides a new method for adjusting the microstructure of catalysts, which has a promising prospect in the field of catalysts preparation.

In this paper, the investigation of structural and optical properties of Zn2SnO4 thin films were studied. The films are performed on glass substrates by pulsed laser technique (PLD) using laser Nd: YAG at wavelength of 1064 nm with 800 mj laser energy using repetition rate of 6 Hz. and average 400 laser pulses at room temperature and annealing by tubular quartz furnace at temperature (573,773) K for 2 hours with air. XRD measurements showed that the structure for all samples is polycrystalline with a cubic nanostructure. Surface morphology was studied using scanning electron microscopy SEM and atomic force microscopy AFM. After annealing, the roughness of the surface and the mean grain size were increased. Optical properties as a function to wavelength in the range (300-1100 nm) have been studied. Absorption spectra of Zn2SnO4 thin films showed that absorption decreases with increasing annealing temperature. Direct energy gap for a Zn2SnO4 thin film was increases with increasing temperature for all samples due to crystal growth. The optical properties such as extinction coefficient, refractive index, and dielectric constant were also studied. .

SnO prepared by soft chemistry exhibits a black color and semiconducting properties. The X-ray diffraction indicates a tetragonal symmetry (SG: P4/nmm) with nano crystallites of an average size of 85 nm. The forbidden band, determined from the diffuse reflectance is found to be 1.46 eV. The electrical conductivity occurs by polaron hopping and follows an Arrhenius type law with activation energy of 0.21 eV, the change in the slope at 526 K is attributed to the oxidation to SnO2. The photo-electrochemical study shows n type conduction with a flat band potential of −0.45 V, close to the photocurrent onset potential (−0.40 V). The electrochemical impedance spectroscopy shows the bulk contribution of SnO (Rb = 1.7 kΩ cm2) and decreases down to 1.89 kΩ cm2 under illumination. The photocatalytic properties have been evaluated for the first time for to the oxygen evolution. The valence band, deriving from Sn2+: 5p orbital with a potential (−0.80 VSCE/5.55 eV), is suitably positioned with respect to O2/H2O level (∼0.6 VSCE), leading to water oxidation under visible light. The best performance occurs at pH ∼ 7 with an oxygen liberation rate of 23 µmol mL h−1 (mg catalyst)−1 and a quantum efficiency of 1.2%. An improvement of ∼13% is observed on the system SnO/clay.

SnO-based sensors doped with palladium (0, 1, 3, 5 and 7%) were prepared by the wet impregnation method. To characterize them, the techniques of infrared spectroscopy with Fourier transform (FTIR), adsorption and desorption of N2 (BET), XRD, scanning electron microscopy (SEM), and X-ray dispersive energy (EDX) spectroscopy were used. The sensors were evaluated with ethanol to form, together with two commercial sensors, an electronic nose (E-nose) that could detect volatile aroma components in Peruvian wines. The results were interpreted through principal component analysis (PCA) to find a technique that complemented the information collected by gas chromatography (GC) and liquid chromatography (HPLC), and by comparing the PCAs obtained from GC and HPLC with those resulting from E-nose. It was found that the latter classified the samples better. It was possible to differentiate both wines from the same grape and from a different strain, and to detect adulterated wines, which contributes to the wine industry in controlling its production to improve the quality of this drink for the consumer.

Olaf Bulls langdikt Sneen er blitt tolket flere ganger, men uten at noen har fokusert på selve tittelen. Denne artikkelen tar sitt utgangspunkt i tittelordet og spør etter snøens funksjon i teksten. Den består i å åpne opp protagonistens øyne for det sublime i Kants forstand. Men det sublime er en tankefigur uten forankring i det ytre. Og siden det sublime knyttes sammen med skriving, ligger det i snømotivet et metapoetisk resonnement. Det som fortoner seg som en fjellvandring av en skuffet protagonist blir på denne måten kun et påskudd for å si noe om poesiens vesen, om det poetiske arbeidet. Dette metanivået realiseres også ved hjelp av rimordenes klang, som hele tiden motarbeider vandrerens prosjekt. Dermed løser det poetiske arbeidet også protagonistens hovedproblem som består i en motsetning mellom ånd og materie, som han først greier å overvinne ved diktets slutt.

The Sudbury Neutrino Observatory (SNO), whose main purpose was to study the neutrinos produced in the Sun, demonstrated that neutrinos can change flavor and, thus, they are massive particles. SNO detected and recorded neutrino and cosmic ray interactions from 1999 to 2006 and several analyses have been completed in the past year using legacy data. We present the results of the most recent ones: the measurements of neutron production in atmospheric neutrino interactions and neutron production by cosmic muons, a search for Lorentz symmetry violation in neutrino oscillations and a search for neutrino decay. A few other analyses are ongoing and we comment about their goal and status. [ABSTRACT FROM AUTHOR]

The aim of this work is to investigate the dielectric properties of undoped and Zn-doped Tin monoxide (SnO) nanocrystals synthesized by the hydrothermal technique. The prepared nanocrystals were made as pellet and characterized by using the LCR meter at various temperatures range from 313 to 373 K for undoped samples and at room temperature for Zn-doped samples in the frequency ranging from 50 Hz to 20 kHz and 50 Hz to 1 MHz respectively. The increase in measurement temperatures of undoped samples reveals the increase in dielectric constant in accordance with the frequency. The activation energy of 0.58 meV has calculated using the Arrhenius plot of DC conductivity at various temperatures. The dielectric loss and dielectric constant values were decreased with the increasing Zn doping concentration but the ac electrical conductivity increases as a function of frequency and also decreases with respect to dopant concentration. [ABSTRACT FROM AUTHOR]

The present paper discusses the structural and optical properties of In2O3 and ITO thin film growing on glass and silicon substrates by assistant microwave irradiation on seeded layer nucleated by spin coating technique. X-ray diffraction study shows that the films have cubic structure. Morphology analysis was studied by atomic force microscopy (AFM) and reveals that the grain size of the prepared thin film is approximately (62.56-76.66)nm , with a surface roughness of (0.447- 1.25) nm as well as root mean square of (0.532-1.44)nm for pure In2O3 and ITO films. Optical characteristics were studied and observed that the transmission value was more than 90 % at the visible wavelength range. The direct energy gap (Eg) was found to be between (3.7-2.6) eV, which decreased significantly with increasing Sn contents..

There is an increasing concern about NOx emission, and many studies have been carried out using metal oxide semiconductors (MOS) aiming its detection. Among the MOS, the SnO micro-disks present a high sensor response and a great selectivity toward NO2. Nevertheless, sensor signal, limit of detection (LOD), and recovery time are related to the experimental setup used to carry on the measurements. Thus, two different heating methods (self-heating and external heating) have been carried out to understand in what manner they change the sensor properties of the SnO micro-disks onto interdigitated electrodes. The external heating method presented higher sensor signal, best LOD, and lower recovery time, mainly due to the lack of a temperature gradient between the SnO disks and the chamber atmosphere. On the other hand, response time was shown to be the same regardless of the method. Briefly, the authors used thermodynamic equations to better understand the temperature effect on the gas-solid interactions occurring between SnO disks and NO2 species.

In this work, semiconductor tin oxide (II) (SnO) nanoparticles and plates were synthesized at room conditions via a hydrolysis procedure. X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed the high crystallinity of the as-synthesized romarchite SnO nanoparticles with dimensions ranging from 5 to 16 nm. The stability of the initial SnO and the controlled oxidation to SnO2 was studied based on either thermal treatments or controlled laser irradiation using a UV and a red laser in a confocal microscope. Thermal treatments induced the oxidation from SnO to SnO2 without formation of intermediate SnOx, as confirmed by thermodiffraction measurements, while by using UV or red laser irradiation the transition from SnO to SnO2 was controlled, assisted by formation of intermediate Sn3O4, as confirmed by Raman spectroscopy. Photoluminescence and Raman spectroscopy as a function of the laser excitation source, the laser power density, and the irradiation duration were analyzed in order to gain insights in the formation of SnO2 from SnO. Finally, a tailored spatial SnO/SnO2 micropatterning was achieved by controlled laser irradiation with potential applicability in optoelectronics and sensing devices.

SnO nanosheets decorated with P25 have been synthesized by ultrasonic reaction to form SnO/P25 composites. Photocatalytic properties of the composites for the visible light degradation of MO were evaluated. Results revealed that P25 amounts significantly influenced the morphology, the absorbability of the visible light region, and the photocatalytic properties of samples. SEM results showed that the addition of small amounts of P25 may obtain micro-flower morphology with P25 nanoparticles loaded on the SnO nanosheets. Dense P25/SnO agglomerates with a size of approximately 2–3 μm were acquired by further increasing P25 content. TEM observations indicated that P25 was closely deposited on the SnO nanosheets. SnO/P25 composites had much higher absorption in the visible light zones than that of SnO sample or P25. The photocatalytic activity results indicate that the P25/SnO composites containing tiny P25 possess excellent catalytic activity for MO degradation. The SnO/2% P25 composites exhibited the highest photocatalytic properties, degrading 99.3% of MO for 60 min. [ABSTRACT FROM AUTHOR]

The distinct electronic properties, including p-type semiconducting and a wide optical band gap, renders SnO suitable for applications such as microelectronic devices, gas sensors and electrodes. However, the synthesis of SnO is rather challenging due to the instability of the oxide, which is usually obtained as a by-product of SnO2 fabrication. In this work, we developed a bioinspired synthesis, based on a hydrothermal approach, for the direct production of SnO nanoparticles. The amount of mineralizer, inducing the precipitation, was identified, which supports a template-free formation of the nanosized SnO particles at low temperature and mild chemical conditions. Moreover, the SnO nanoparticles exhibit a shape of unique three-dimensional crosses similar to the calcite crosses present in the calcareous sponges. We demonstrated that SnO crosses are evenly distributed and embedded in an organic scaffold by an ice-templating approach, in this way closely mimicking the structure of calcareous sponges. Such scaffolds, reinforced by an active material, here SnO, could be used as filters, sensors or electrodes, where a high surface area and good accessibility are essential. This article is part of the theme issue 'Bioinspired materials and surfaces for green science and technology (part 2)'. [ABSTRACT FROM AUTHOR]

This present work investigated the effects of proton-beam irradiation on SnO-based p-type oxide thin-film transistors (TFTs) for the first time. The experiments were performed using a 5-MeV proton beam with doses ranging from $10^{12}$ to $10^{14}\,\,\textsf {p}\cdot \textsf {cm}^{-2}$. The experimental results showed that the transfer curves of the p-type SnO TFT rarely changed following the proton irradiation at every irradiation condition, indicating that the p-type SnO TFT could be potentially useful in implementing complementary-logic-based oxide TFT circuits operating in harsh environments. The insensitivity of current conduction paths to SnO lattice disorder was considered as a possible mechanism for the observed radiation tolerance of the p-type SnO TFTs. [ABSTRACT FROM AUTHOR]

Abstract Tin oxide (SnO x) is a promising oxide semiconductor due to the distinct properties of n-type SnO 2 and p-type SnO based on its stoichiometry. However, the stoichiometry control of SnO x remains challenging due to the thermodynamic instability of SnO. In the study, we focus on establishing the controllable stoichiometry of SnO x via atomic layer deposition (ALD) and subsequent treatment. The controllable synthesis of SnO 2 and SnO is investigated by multiple analyses involving the chemical composition, crystal structure, and band structure. The ALD SnO x is composed mostly of Sn4+ O bonds with intrinsic oxygen vacancies and is transformed into crystalline SnO 2 phase via post-annealing. The refractive index (~1.8) and optical bandgap energy (~3.6 eV) of ALD SnO x correspond to those of SnO 2. Post-deposition treatment with H 2 plasma enables the effective transformation of SnO 2 into SnO due to the easy penetration of H+ ion into the film and de-bonding of Sn O via ion bombardment. The transformed SnO exhibits a significant amount of Sn2+ O bonds with a refractive index of 2.8 and optical bandgap energy of ~2.9 eV. Specifically, the transformed SnO exhibits promise as an oxide semiconductor because it exhibits excellent stability with respect to re-oxidation into SnO 2 or further reduction into Sn metal. The present study advances practical applications that require a stable p-n junction through n-type SnO 2 and p-type SnO in various forms of device architectures. Highlights • Formation of SnO 2 and SnO was controlled by atomic layer deposition and post-process. • Chemical composition, crystal structure, and band structure of SnO x were analyzed. • As-deposited SnO x exhibits typical characteristics of SnO 2. • Post-deposition treatment with H 2 plasma effectively transforms SnO 2 into SnO. • Transformed SnO is stable against re-oxidation or reduction during post-process. [ABSTRACT FROM AUTHOR]