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Cs2AgBiBr6, as a benchmark lead‐free double perovskite, has emerged as a promising alternative to lead‐based perovskites because of its high stability, non‐toxicity, exceptional optoelectronic properties, and multifunctionality. To encourage further research on Cs2AgBiBr6 and its broad applications, in this review, its fundamental properties including the structure‐property relation, synthesis, stability, origin of absorption and photoluminescence, electron‐phonon coupling, role of defects, charge carrier dynamics, and bandgap modulation are comprehensively emphasized. The recent progress on the wide applications including solar cells, light/X‐ray detectors, and ferroelectric/magnetic devices are highlighted. Moreover, the challenges of Cs2AgBiBr6 materials and related applications are discussed and perspectives are provided for guiding the future development of this research area. [ABSTRACT FROM AUTHOR]

Tin (Sn) is a potential replacement for lead in organic–inorganic perovskite solar cell (PVSC) technology due to the attractive optoelectronic properties of Sn-perovskites. However, the poor stability of Sn2+ ions is still the main hindrance for achieving highly stable and efficient Sn-based PVSCs. In this work, anilinium hypophosphite (AHP) is introduced as a co-additive into a Sn-absorber perovskite precursor containing the tin fluoride (SnF2) additive. The incorporation of the AHP additive not only prohibits the phase separation of SnF2 but also passivates the perovskite films and finally results in absorbers with superior structural and optoelectronic properties. The underlying reason is related to the formation of a double-salt complex (Sn(H2PO2)2·SnF2) through the interaction between AHP and SnF2. The high quality of the absorber film induced by AHP delivers an improved device power conversion efficiency (PCE) with a higher open-circuit voltage than those without the AHP additive. More importantly, the device with the AHP additive can retain up to 97% of its PCE after 30 days of storage in a glovebox. [ABSTRACT FROM AUTHOR]

Graphical abstract Highlights • Sb 2 S 3 films were in situ fabricated by a facile hydrothermal method. • Efficient planar Sb 2 S 3 solar cells were constructed using this method. • We developed a novel and useful method for fabricating Sb 2 S 3 films and devices. Abstract In this study, we reported a novel in situ hydrothermal approach for fabricating Sb 2 S 3 films. Metal Sb films were first deposited on substrates using room-temperature radio frequency magnetron sputtering and then undergo an in situ transformation to Sb 2 S 3 films through a novel low-temperature hydrothermal reaction. Characteristics of the obtained Sb 2 S 3 films prepared by our method were investigated. Planar Sb 2 S 3 solar cells utilizing in situ fabricated Sb 2 S 3 film as absorber has also been fabricated and yielded a power conversion efficiency of 1.32%. [ABSTRACT FROM AUTHOR]

In this paper, a thin layer of high work function CuS was introduced to the interface between the anode and hole transporting layer (HTL) to modify the indium tin oxide (ITO) anode. Modified ITO substrates possess a higher work function, a lower sheet resistance and a negligible loss in transparency. More importantly, a thin layer of CuS can also benefit for the hole transporting of the device. Polymer solar cells (PSCs) utilizing modified ITO anodes exhibit a significant enhancement in power conversion efficiency ( PCE ) and air stability compared to devices with normal ITO anodes. This anode modification strategy applies to different active layer systems. Anode-modified devices with poly (3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PC 61 BM) as the active layer exhibit a PCE of 3.5%, while poly(4,8-bis(5-(2-ethyl-hexyl)-thiophene-2-yl)-benzo[l,2-b:4,5-b′] dithiophene-alt-alkylcarbonyl-thieno[3,4-b]thiophene) (PBDTTT-C-T) and [6,6]-phenyl-C71-butyric acid methyl ester (PC 71 BM) system shows a PCE of 7.4%. As a result, this work provides a good compatibility for modification of ITO by a thin layer of CuS in PSCs to achieve better performance. [ABSTRACT FROM AUTHOR]

In this article, we in situ fabricated copper sulfide (CuS) on fluorinated tin oxide (FTO) substrate using a low temperature and low cost hydrothermal method and then organic solar cells (OSCs) were fabricated by using a thin layer of CuS film as hole transporting layer (HTL). Our CuS films, consisting of two-dimensional (2D) intersected hexagonal nanosheets, are stoichiometric and show p-type electrical conductivity, a good transparency and a high hole mobility. The Fermi level, valence and conduction band energies for CuS HTL are characterized in detail through photoelectron spectroscopy studies. The small energy barrier between the valance band of CuS and the HOMO of poly(3-hexylthiophene) (P3HT) and the high hole mobility and electrical conductivity of CuS nanosheet film benefit for the hole transporting. Therefore, CuS HTL to OSCs results in a power conversion efficiency of 3.4% with P3HT and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as the active layer, which is a 13.3% increase in performance than devices with a poly (3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) HTL. Therefore, low-cost, environmental friendly and stable CuS is an appropriate choice for hole transporting materials (HTMs) in OSCs. [ABSTRACT FROM AUTHOR]

[Display omitted] • Anilinium hypophosphite was used as a co-additive in FASnI 3 perovskite. • Anilinium hypophosphite improved the perovskite optoelectronic properties. • Enhanced photovoltaic performance was obtained using new additive. Tin (Sn) is a promising substitute for lead (Pb) in organic–inorganic hybrid halide perovskite-photovoltaic devices, but it is prone to delivering low power conversion efficiencies (PCEs) due to the poor quality of Sn-perovskite films. In this work, anilinium hypophosphite (AHP) co-additive is used to fabricate high-quality FASnI 3 (FA+: formamidinium) perovskite films with suppressed phase-segregation and prolonged charge carrier lifetime. Perovskite films containing 0.05 M AHP are used to fabricate solar cells and deliver improved power conversion efficiency (PCE) of up to 5.48% (control devices: 4.04%). AHP eliminates the phase separation caused by SnF 2 in the absorber, leading to films with enhanced optoelectronic properties, hence the high performance of AHP-based devices. [ABSTRACT FROM AUTHOR]

• We present preparation of SnS thin films through thermal evaporation route and characterize phase composition of these films. • A single phase and alternative light absorber SnS films were fabricated at the substrate temperature of 250 °C. • Efficient planar SnS hybrid solar cells were constructed using this method. Tin sulfide (SnS) is a promising absorber material for photovoltaic cells, because of its optimum band gap, strong optical absorption, simple phase composition, earth-abundant and nontoxic constituents. However, this material is largely unexploited to date with only a handful of studies reporting SnS for photovoltaic application. We present systematic preparation of SnS thin films through thermal evaporation route and characterize phase composition of these films. We have observed that the films grown at the substrate temperature of 250 °C exhibit a single SnS phase, which could be alternative light absorber materials for photovoltaic devices fabrication. Hence, a solar conversion efficiency of 1.47% was obtained at standard one sun illumination using a planar device consisting of FTO/TiO 2 /SnS/P3HT/Au. The present findings offer novel directions for achieving high-efficiency solid-state solar cells by hybridization of inorganic-organic light harvesters and hole transporters. [ABSTRACT FROM AUTHOR]

Perovskite solar cells have developed rapidly in recent years as the third generation solar cells. In spite of the great improvement achieved, there still exist some issues such as undesired hysteresis and indispensable high temperature process. In this work, bulk heterojunction perovskite-phenyl-C 61 -butyric acid methyl ester solar cells have been prepared to diminish hysteresis using a facile two step spin-coating method. Furthermore, high quality tin oxide films are fabricated using pulse laser deposition technique at room temperature without any annealing procedure. The as fabricated tin oxide film is successfully applied in bulk heterojunction perovskite solar cells as a hole blocking layer. Bulk heterojunction devices based on room temperature tin oxide exhibit almost hysteresis-free characteristics with power conversion efficiency of 17.29% and 14.0% on rigid and flexible substrates, respectively. [ABSTRACT FROM AUTHOR]

Ternary oxides Fe 2-x Mg x O 3 is introduced to passivate the perovskite/SnO 2 QDs interface, trigger the heterogeneous nucleation for uniform perovskite films, and increase the interface contact for the rapid electron transfer. Consequently, the corresponding perovskite solar cell achieves a champion efficiency over 21%. [Display omitted] • Fe 2-x Mg x O 3 is introduced to passivate the perovskite/SnO 2 interface. • The interaction between perovskite and Fe 2-x Mg x O 3 triggers a heterogeneous nucleation. • Flocculent Fe 2-x Mg x O 3 increase the contact with perovskite for electron transfer. • The interaction between Fe 2-x Mg x O 3 and SnO 2 QD passivates the defects. • Fe 1.84 Mg 0.16O 3 -based PSC achieves a champion efficiency over 21% with negligible J–V hysteresis. Interface function material has been widely used to reduce interfacial potential barrier for enhanced charge-dynamics and photovoltaic properties of perovskite solar cells (PSCs). Herein, ternary oxides Fe 2-x Mg x O 3 are introduced to passivate the perovskite/SnO 2 quantum dots (QDs) interface. The interaction between perovskite and Fe 2-x Mg x O 3 could trigger a heterogeneous nucleation for the uniform perovskite photoactive layer. The flocculent Fe 2-x Mg x O 3 also increase the interface contact with perovskite enabling more transferring channel of electron, and decrease the interface-defects with smaller the energy level offset at this interface. Such oxide bridges between perovskite and SnO 2 QD could effectively enhance electron transfer. Consequently, a Fe 1.84 Mg 0.16 O 3 -based PSC is achieved with a champion efficiency over 21% and negligible J–V hysteresis. [ABSTRACT FROM AUTHOR]

Abstract: Efficient bulk-heterojunction (BHJ) polymer solar cells (PSCs) based on poly (3-hexylthiophene) (P3HT): indene-C60 bisadduct (ICBA) were fabricated with lithium fluoride (LiF) as electron collecting buffer layer and UV–ozone (UVO) treated molybdenum trioxide (MoO3) as hole collecting buffer layer. LiF is observed to be critical for the device performance, significantly enhancing the fill factor (FF) and the efficiency compared to the device without LiF layer. MoO3 layer is also critical to the device performance, efficiently extracting holes to prevent the exciton quenching and reducing the interfacial resistance because of alignment of energy band. After UVO treatment on MoO3 film, its surface morphology, transmittance and film quality can be improved, therefore, it is beneficial to the performance of the PSCs. The optimal thickness of MoO3 and UVO treatment time on MoO3 was 12nm and 15min, respectively. Based on these optimal parameters, a power conversion efficiency (PCE) of 6.43% was obtained under AM1.5G 100mW/cm2 illumination. [Copyright &y& Elsevier]