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This study presents an innovative method for the synthesis of indium aluminum nitride (InAlN) layers by direct current (DC) co-sputtering at room temperature, with the aim of reducing production costs of optoelectronic devices. Indium and aluminum targets are used, varying the power applied to the aluminum target. The results show that increasing the target power favors the formation of aluminum nitride (AlN), which modifies the chemical composition of the material. The layers obtained present smooth surfaces with a roughness of less than 3 nm, which is beneficial for applications requiring interfaces with low defect density. Regarding the optical properties, it is observed that the optical bandgap varies between 1.8 eV and 2.0 eV, increasing with the target power. Hall effect measurements indicate a decrease in the free carrier concentration and an increase in the resistivity with increasing power. This approach allows for the synthesis of InAlN with properties suitable for optoelectronic applications, solar cells, photocatalysis, and photoelectrocatalysis at low cost. [ABSTRACT FROM AUTHOR]

Quest for efficient and lead-free perovskite absorber layer is the need of the hour. The less explored titanium-based halide perovskites might be the non-toxic answer for the efficient yet toxic, organic, lead-based halide perovskite. It is of great interest to synthesize cesium titanium iodide perovskite and to investigate their novel properties. We have reported the synthesis of vacancy-ordered double perovskite cesium titanium iodide (Cs2TiI6) at room temperature. Structural, electrical and optical properties are investigated. Broad photoluminescence spectrum is observed. Absorbance and stability of this compound are discussed in detail. Using the absorption data, we have simulated solar cells with different transport layers to give an insight into its application. [ABSTRACT FROM AUTHOR]

Perovskite solar cells deliver high efficiencies, but are often made from high‐cost bespoke chemicals, such as the archetypical hole‐conductor, 2,2′,7,7′‐tetrakis(N,N‐di‐p‐methoxy‐phenylamine)‐9‐9′‐spirobifluorene (spiro‐OMeTAD). Herein, new charge‐transporting carbazole‐based enamine molecules are reported. The new hole conductors do not require chemical oxidation to reach high power conversion efficiencies (PCEs) when employed in n‐type‐intrinsic‐p‐type perovskite solar cells; thus, reducing the risk of moisture degrading the perovskite layer through the hydrophilicity of oxidizing additives that are typically used with conventional hole conductors. Devices made with these new undoped carbazole‐based enamines achieve comparable PCEs to those employing doped spiro‐OMeTAD, and greatly enhanced stability under 85 °C thermal aging; maintaining 83% of their peak efficiency after 1000 h, compared with spiro‐OMeTAD‐based devices that degrade to 26% of the peak PCE within 24 h. Furthermore, the carbazole‐based enamines can be synthesized without the use of organometallic catalysts and complicated purification techniques, lowering the material cost by one order of magnitude compared with spiro‐OMeTAD. As a result, we calculate that the overall manufacturing costs of future photovoltaic (PV) modules are reduced, making the levelized cost of electricity competitive with silicon PV modules. [ABSTRACT FROM AUTHOR]