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Lanthanide ions doped in perovskite (LIDP) nanocrystals (NCs) provide an effective way to utilize the emission of lanthanide metals in a solution‐processable way, combining the theoretical photoluminance quantum yield (PLQY) of ≈200%. To utilize advantages, LIDP‐NCs have inspired studies exploring the fundamental physics of energy transfer, including the up‐conversion or down‐conversion process, and the optoelectronic applications of solar cells and white light‐emitting didoes. This review broadens the scope of LIDP nanocrystal matrix semiconductors in electroluminescence devices in the near‐infrared (NIR) range (>900 nm). A research is summarized on the synergistic effect of lanthanide ions and perovskite matrix in the near‐infrared region, and discuss from the perspective of fabrication of lanthanide‐based electroluminescent devices using perovskite materials as the matrix. The multiple optical transitions, bandgap tunability, and quantum‐cutting effect to provide a tutorial on understanding LIDP‐NCs are started. The details of synthesizing LIDP materials and aim to lay the foundation for preparing NIR electroluminescent devices with high efficiency and application value are then illustrated. The scientific issues that limit the performance of LIDP NCs‐based electroluminescent devices and discuss the potential strategies for the future development of LIDP material are focused on. [ABSTRACT FROM AUTHOR]

The substrates of conventional flexible perovskite solar cells (FPSCs) are thermoplastic polymer material polyethylene naphthalate (PEN), which will deform during high temperature annealing process. In addition, lead iodide (PbI2) permanently formed and the substrate undergoes reversible deformation from 20 °C to 200 °C and back to 20 °C. Therefore, to balance the substrate supporting capacity and the crystalline quality of narrow band gap α‐phase formamidinium lead iodide (α‐FAPbI3), an annealing process of 120 °C for 30 minutes is determined. Additionally, there will also be a large number of gaps and lattice strain at the perovskite grain boundaries during the annealing process as the FAPbI3 phase transition is accompanied by much lattice shrinkage. As a result, 1,6‐hexanediammonium diiodide (HADI) is chosen to passivate the defects and release the stress of perovskite film. Therefore, a recorded 1.4% extended stretch rate of the flexible film is attained. Finally, the champion PCE of 21.14% under AM 1.5G and 31.52% under 1062 lux is achieved after HADI treatment, accompanied by a better long‐term and mechanical stability. This study provides annealing process optimization and stress relief strategies for the further development of narrow band gap FPSCs. [ABSTRACT FROM AUTHOR]