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Two morphologies of In 2 S 3 film were synthesized directly on FTO surface with microwave-assistant solution method. With reaction time/temperature/microwave power increasing, In 2 S 3 film assembled by hierarchical flower-like structure (In 2 S 3 flower) transformed into In 2 S 3 film assembled by net-like structure (In 2 S 3 net) with increased size and crystallinity. Compared to In 2 S 3 flower, In 2 S 3 net displayed stronger light-harvesting ability with higher charge separation, contributing to stronger photocurrent and lower charge transfer resistance. Based on the excellent photoelectrical properties, TiO 2 /In 2 S 3 /CuInS 2 /spiro-oMeTAD solar cells were fabricated with two In 2 S 3 films as the buffer layers as compared to the device without In 2 S 3 , which displayed obviously higher photovoltaic parameters due to the decreased surface defects on TiO 2 and the increased complementary absorption from In 2 S 3. Furthermore, the device with In 2 S 3 net presented higher short current density (J sc) than that with In 2 S 3 flower because the thicker In 2 S 3 layer strengthened the contribution of complementary light-harvesting. However, it displayed lower open circuit voltage (V oc), which was attributed to the presence of defects on the surface of overgrown In 2 S 3 for increased interfacial recombination. [ABSTRACT FROM AUTHOR]

[Display omitted] • In 2 O 3 film is used as an electron transport layer in Perovskite Solar Cells. • The In 2 O 3 electron transport layer is prepared by electron beam evaporation. • In 2 O 3 layer can improve the film formation quality and crystallinity of perovskite. • The photovoltaic performance of perovskite solar cells is enhanced by In 2 O 3 layer. In perovskite solar cells, the interface plays a crucial role in photovoltaic performance because excitons dissociate and compound at the interface. In this paper, the optical absorption layer of In 2 O 3 planar perovskite solar cells is studied, which is an efficient intermediate layer between the TiO 2 electron transport layer and perovskite. The modification of the In 2 O 3 interlayer increases the average power conversion efficiency from 6.74% to 10.68%. Based on this background, some other feature descriptions are also carried out. The results show that the photovoltaic performance can be improved by depositing the In 2 O 3 interlayer, mainly due to the improved film morphology, reduced recombination center, bulk carrier concentration and Hall mobility. It has been shown that In 2 O 3 can be used as an efficient interface material on all-inorganic perovskite solar cells. [ABSTRACT FROM AUTHOR]

Acid texture is difficult for diamond wire sawn (DWS) multicrystalline silicon (mc-Si) wafer owing to the inhomogeneous distribution of damage layer on the surface. In this article, metal-assisted chemical etching (MACE) has been selected for introducing a porous seeding layer to induce acid texturing etching. SEM results show that the oval pit structures coverage get obvious improvement even on the smooth areas. Owing to the further improved light absorption ability by second MACE and nanostructure rebuilding (NSR) process, nanostructured DWS mc-Si solar cell has exhibited a conversion efficiency of 17.96%, which is 0.45% higher than that of DWS wafer with simple acid texture process. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

The absence of an effective texturing technique for diamond-wire sawn multi-crystalline silicon (DWS mc-Si) solar cells has hindered commercial upgrading from traditional multi-wire slurry sawn silicon (MWSS mc-Si) solar cells. In this work, we present a novel method for the removal of diamond-wire-sawn marks in a multi-crystalline silicon wafer based on metal assisted chemical etching process with Cu/Ag dual elements and nano-structure rebuilding (NSR) treatment to make a uniform inverted pyramid textured structure. The temperature effect of NSR solution was systematically analyzed. It was found that the size of the inverted pyramid structure and the reflectance became larger with the increase of the NSR treatment temperature. Furthermore, the prepared unique inverted pyramid structure not only benefited light trapping, but also effectively removed the saw-marks of the wafer at the same time. The highest efficiency of 19.77% was obtained in solar cells with an inverted pyramid structure (edge length of 600 nm) fabricated by NSR treatment at 50 °C for 360 s, while its average reflectance was 16.50% at a 400–900 nm wavelength range. [ABSTRACT FROM AUTHOR]