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A 2 μm passively Q‐switched Tm:YAP solid‐state laser with MoS2 as saturated absorber was demonstrated in this work. MoS2 two‐dimensional materials were prepared by using the method of chemical vapor deposition. The laser achieved high peak power of 21.2 W and high single pulse energy of 19.5 μJ, while maintaining a short pulse width of 916 ns. This is the first time that the peak power of a Tm:TAP solid‐state laser based on a MoS2 saturated absorber has reached 21.2 W. The beam quality factor was M2x = 1.08 and M2y = 1.10. [ABSTRACT FROM AUTHOR]

Presented here was the spectrum and laser performance of a Tm:YAP (YAlO 3) laser crystal under 1 MeV electron irradiation. It was demonstrated that, under the radiation of S 3E15 , the absorption spectrum was enhanced of about 1.2 times at the absorption peak at 688 nm, and the absorption peak at 794 nm was enhanced of about 1.16 times, the laser threshold increased from 2.7 W to 2.93 W, the maximum output power reduced from 2.89 W to 2.585 W an d the slope efficiency decreased of nearly 3% at pump power of 13.325 W, the center wavelength drifted from 1991.68 nm to 1992.76 nm, the wavelength FWHM increased by about 0.7 nm. [ABSTRACT FROM AUTHOR]