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The vast majority of space probes to date have relied upon photovoltaic power generation. If future missions designed to probe environments close to the sun (Figure 1) will be able to use such power generation, solar cells that can function at high temperatures, under high light intensity, and high radiation conditions must be developed. The significant problem is that solar cells lose performance at high temperatures.

The NASA Glenn Research Center is evaluating the use of carbon nanotubes as anode materials for thin-film lithium-ion (Li) batteries. The motivation for this work lies in the fact that, in contrast to carbon black, directed structured nanotubes and nanofibers offer a superior intercalation media for Li-ion batteries. Carbon lamellas in carbon blacks are circumferentially oriented and block much of the particle interior, rendering much of the matrix useless as intercalation material. Nanofibers, on the other hand, can be grown so as to provide 100-percent accessibility of the entire carbon structure to intercalation. These tubes can be visualized as "rolled-up" sheets of carbon hexagons (see the following figure). One tube is approximately 1/10,000th the diameter of a human hair. In addition, the high accessibility of the structure confers a high mobility to ion-exchange processes, a fundamental for the batteries to respond dynamically because of intercalation.

The key to achieving high specific power (watts per kilogram) space photovoltaic arrays is the development of high-efficiency thin-film solar cells that are fabricated on lightweight, space-qualified substrates such as Kapton (DuPont) or another polymer film. Cell efficiencies of 20 percent air mass zero (AM0) are required. One of the major obstacles to developing lightweight, flexible, thin-film solar cells is the unavailability of lightweight substrate or superstrate materials that are compatible with current deposition techniques. There are two solutions for working around this problem: (1) develop new substrate or superstrate materials that are compatible with current deposition techniques, or (2) develop new deposition techniques that are compatible with existing materials. The NASA Glenn Research Center has been focusing on the latter approach and has been developing a deposition technique for depositing thin-film absorbers at temperatures below 400 C.

The need for smaller, lightweight, autonomous power systems has recently increased with the increasing focus on microsatellites and nanosatellites. The NASA Glenn Research Center has been working on the development of such systems and recently developed several power technology demonstrations in conjunction with Project Starshine. The Starshine 3 microsatellite is designed to measure the density of the Earth's upper atmosphere as a function of solar activity and is primarily a passive experiment. Therefore, it did not need electrical power to successfully complete its primary mission, although a power system for future Starshine satellites was desired that could be used to power additional instruments to enhance the data collected. This created an excellent opportunity to test new power technologies capable of supplying this future need. Several Government and commercial interests teamed up with Glenn to provide Starshine 3 with a small power system using state-of-the-art components. Starshine 3 is also the inaugural flight of a novel integrated microelectronic power supply (IMPS) developed at Glenn.

The NASA Glenn Research Center has been investigating the synthesis of quantum dots of CdSe and CuInS2 for use in intermediate-bandgap solar cells. Using quantum dots in a solar cell to create an intermediate band will allow the harvesting of a much larger portion of the available solar spectrum. Theoretical studies predict a potential efficiency of 63.2 percent, which is approximately a factor of 2 better than any state-of-the-art devices available today. This technology is also applicable to thin-film devices--where it offers a potential four-fold increase in power-to-weight ratio over the state of the art. Intermediate-bandgap solar cells require that quantum dots be sandwiched in an intrinsic region between the photovoltaic solar cell's ordinary p- and n-type regions (see the preceding figure). The quantum dots form the intermediate band of discrete states that allow sub-bandgap energies to be absorbed. However, when the current is extracted, it is limited by the bandgap, not the individual photon energies. The energy states of the quantum dot can be controlled by controlling the size of the dot. Ironically, the ground-state energy levels are inversely proportional to the size of the quantum dots. We have prepared a variety of quantum dots using the typical organometallic synthesis routes pioneered by Ba Wendi et al., in the early 1990's. The most studied quantum dots prepared by this method have been of CdSe. To produce these dots, researchers inject a syringe of the desired organometallic precursors into heated triocytlphosphine oxide (TOPO) that has been vigorously stirred under an inert atmosphere (see the following figure). The solution immediately begins to change from colorless to yellow, then orange and red/brown, as the quantum dots increase in size. When the desired size is reached, the heat is removed from the flask. Quantum dots of different sizes can be identified by placing them under a "black light" and observing the various color differences in their fluorescence (see the photograph).

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.