1. GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range.
- Author
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Kunitsyna, E. V., Andreev, I. A., Konovalov, G. G., Ivanov, E. V., Pivovarova, A. A., Il’inskaya, N. D., and Yakovlev, Yu. P.
- Subjects
GALLIUM selenide ,HETEROSTRUCTURES ,PHOTODIODES ,NANOFABRICATION ,SOLUTION (Chemistry) - Abstract
Abstract: GaSb/GaAlAsSb uncooled photodiodes for the 1.1-1.85 μm spectral range are fabricated and studied. A unique method for the growth of GaSb from lead solution-melts makes it possible to obtain a low carrier concentration in the active region: n = 2 × 10
15 cm-3 . The capacitance of the photodiodes is 70-110 pF for a sensitive -area diameter of 300 μm and 150-250 pF for a diameter of 500 μm. The photodiodes are characterized by a high (for GaSb devices) spectral sensitivity Sλ = 0.95 A/W at the maximum, a relatively low reverse dark current density j = (4-9) × 10-3 A/cm2 at Urev = 1.0-2.0 V, and high-speed performance (response time 5-10 ns). [ABSTRACT FROM AUTHOR]- Published
- 2018
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