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Herein, we report the structural, morphological, optical and electrical properties of undoped and Ti-doped SnS2 thin films deposited on glass substrate by sol–gel spin coating technique. Grazing-Incidence X-ray diffraction and Raman analyses confirm the formation of hexagonal phase of as-deposited films. The structural parameters were estimated through GI-XRD data and found to be varying with Ti4+ concentration. Field effect scanning electron microscopy images show as-grown spherical nanoparticles with uniform deposition on the entire glass substrate. The UV–Vis absorption spectra were recorded to explore the optical properties of films. The analysis of data revealed the semiconductor nature of as-deposited films with a band gap of 2.24 eV in case of undoped SnS2. An intermediate band was also observed at 5 and 20 mol% Ti4+ concentration which directly indicates the extension of light absorption ability from visible to near infrared region of the solar spectrum. The X-ray photoelectron spectroscopy analysis was performed to confirm the existence of constituent elements in the as-deposited films with their oxidation state. The electrical properties were explored by I–V and Hall Effect measurements. [ABSTRACT FROM AUTHOR]