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Spintronic devices that utilize spin transfer torque are promising for integrated memory applications. However, these devices face substantial energy consumption challenges due to the high current densities required for switching. Conversely, voltage‐driven spintronic devices, using capacitive displacement charge, can realize switching operations that are energy‐efficient (≈1–10 fJ bit−1). This work investigates switching based on voltage control of the interlayer exchange coupling in perpendicular magnetic anisotropy (PMA) multilayered heterostructures. Unlike previous works that utilized gating techniques that employ ionic transport mechanisms to control interlayer exchange coupling, this study employs electrostatic gating by using MgO, which is more compatible with modern spintronic‐based memories. These results suggest that the magnetization anisotropy, and the magnitude, and phase of the Ruderman‐Kittel‐Kasuya‐Yosida (RKKY) coupling function with spacer layer thickness can be controlled through electric gating, providing a promising avenue for the development of energy‐efficient magnetic data storage devices. [ABSTRACT FROM AUTHOR]

The article describes the development of spin-polarized tunneling. It notes that the suitability of aluminum (Al) properties makes the occurrence of the discovery of SPT striking and that the Al's ultrathin oxide films make ideal tunnel barriers. As indicated, the phenomena of spin-polarizing and spin-filtering is important n various spintronics applications such as universal memory, programmable gate, and the electrical injection of spin into semiconductors. INSET: Spin polarization in tunneling experiments.

Magnetic skyrmions have so far been treated as two-dimensional spin structures characterized by a topological winding number. However, in real systems with the finite thickness of the device material being larger than the magnetic exchange length, the skyrmion spin texture extends into the third dimension and cannot be assumed as homogeneous. Using soft x-ray laminography, we reconstruct with about 20-nanometer spatial (voxel) size the full three-dimensional spin texture of a skyrmion in an 800-nanometer-diameter and 95-nanometer-thin disk patterned into a 30× [iridium/cobalt/platinum] multilayered film. A quantitative analysis finds that the evolution of the radial profile of the topological skyrmion number is nonuniform across the thickness of the disk. Estimates of the micromagnetic energy densities suggest that the changes in topological profile are related to nonuniform competing energetic interactions. Our results provide a foundation for nanoscale metrology for spintronics devices using topology as a design parameter. [ABSTRACT FROM AUTHOR]