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Flexible CZTSSe thin film solar cells were prepared on Ti foil substrate. With adding a Ge buffer layer between the Ti foil substrate and the Mo back contact, CZTSSe thin film showed a better crystallization and less secondary phases. It was confirmed that Ge diffused into CZTSSe layer and had a promoting effect on Sn +4 state formation and stress release. The flexible CZTSSe solar cell with Ge buffer layer showed a conversion efficiency of 2.00%, which presented a 200% enhancement comparing to the solar cell without Ge buffer layer. [ABSTRACT FROM AUTHOR]

CZTSSe thin films based on three-layer precursors with Cu-poor and Zn-rich in top and bottom layer while stoichiometric in middle layer were prepared. Compared with CZTSSe thin film obtained from a stoichiometric single layer precursor, the crystallization of thin film from a three-layer precursor got enhanced. Element distribution and growth nuclei position in precursor played an important role on CZTSSe thin film formation and solar cell performance. The conversion efficiency of CZTSSe solar cell from a three-layer precursor attained an increase of 3.54% over that from a single layer precursor. [ABSTRACT FROM AUTHOR]